Vishay TrenchFET N channel-Channel Power MOSFET, 45.3 A, 70 V N, 8-Pin PowerPAK SISS178LDN-T1-BE3
- RS-stocknr.:
- 851-509
- Fabrikantnummer:
- SISS178LDN-T1-BE3
- Fabrikant:
- Vishay
Afbeelding representeert productcategorie
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 rol van 1 eenheid)*
€ 1,76
(excl. BTW)
€ 2,13
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 10 augustus 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Rol(len) | Per rol |
|---|---|
| 1 - 9 | € 1,76 |
| 10 - 99 | € 1,10 |
| 100 - 499 | € 0,72 |
| 500 - 999 | € 0,58 |
| 1000 + | € 0,52 |
*prijsindicatie
- RS-stocknr.:
- 851-509
- Fabrikantnummer:
- SISS178LDN-T1-BE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | N channel | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 45.3A | |
| Maximum Drain Source Voltage Vds | 70V | |
| Package Type | PowerPAK | |
| Series | TrenchFET | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.013Ω | |
| Channel Mode | N | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 18.7nC | |
| Maximum Power Dissipation Pd | 39W | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.04mm | |
| Length | 6.05mm | |
| Standards/Approvals | AEC-Q101 Qualified | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type N channel | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 45.3A | ||
Maximum Drain Source Voltage Vds 70V | ||
Package Type PowerPAK | ||
Series TrenchFET | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.013Ω | ||
Channel Mode N | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 18.7nC | ||
Maximum Power Dissipation Pd 39W | ||
Maximum Operating Temperature 175°C | ||
Height 1.04mm | ||
Length 6.05mm | ||
Standards/Approvals AEC-Q101 Qualified | ||
Automotive Standard AEC-Q101 | ||
- Land van herkomst:
- IL
The Vishay N-Channel MOSFET offers high efficiency in power management, featuring a robust construction that supports various electrical demands in Advanced electronic applications.
Rated for a drain-source voltage of 70 V, ensuring reliable performance in diverse applications
Exhibits low on-resistance with a maximum of 0.0109 Ω at 4.5 V, enhancing energy efficiency
Designed to handle continuous drain currents up to 42.3 A, supporting high-power operations
Incorporates a single Pulse avalanche rating of 15 A, safeguarding against voltage transients
Gerelateerde Links
- Vishay SISS178LDN Type N-Channel Single MOSFETs 70 V Enhancement, 8-Pin PowerPAK SISS178LDN-T1-UE3
- Vishay SISS178LDN Type N-Channel Single MOSFETs 70 V Enhancement, 8-Pin PowerPAK
- Vishay TrenchFET N channel-Channel Power MOSFET 250 V N, 8-Pin PowerPAK SIR692DP-T1-BE3
- Vishay TrenchFET N channel-Channel Power MOSFET 70 V N, 8-Pin PowerPAK SISS176LDN-T1-BE3
- Vishay TrenchFET N channel-Channel Power MOSFET 80 V N, 8-Pin PowerPAK SIR178DP-T1-BE3
- Vishay TrenchFET Type N-Channel MOSFET 70 V Enhancement, 8-Pin PowerPAK 1212 SiS178LDN-T1-GE3
- Vishay TrenchFET Type N-Channel MOSFET 70 V Enhancement, 8-Pin PowerPAK 1212
- Vishay SI34 N channel-Channel Power MOSFET -20 V P, 8-Pin PowerPAK SI3493DDV-T1-BE3