Vishay SUD50P04-08 Type P-Channel MOSFET, 50 A, 40 V Enhancement, 3-Pin TO-252 SUD50P04-08-GE3
- RS-stocknr.:
- 121-9658
- Fabrikantnummer:
- SUD50P04-08-GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 7,20
(excl. BTW)
€ 8,70
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 5 stuk(s) klaar voor verzending vanaf een andere locatie
- Plus verzending 7.610 stuk(s) vanaf 05 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 1,44 | € 7,20 |
| 50 - 120 | € 1,294 | € 6,47 |
| 125 - 245 | € 1,076 | € 5,38 |
| 250 - 495 | € 0,836 | € 4,18 |
| 500 + | € 0,662 | € 3,31 |
*prijsindicatie
- RS-stocknr.:
- 121-9658
- Fabrikantnummer:
- SUD50P04-08-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-252 | |
| Series | SUD50P04-08 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 10mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 106nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 73.5W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | -0.8V | |
| Maximum Operating Temperature | 150°C | |
| Height | 2.38mm | |
| Standards/Approvals | No | |
| Width | 6.22 mm | |
| Length | 6.73mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-252 | ||
Series SUD50P04-08 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 10mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 106nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 73.5W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf -0.8V | ||
Maximum Operating Temperature 150°C | ||
Height 2.38mm | ||
Standards/Approvals No | ||
Width 6.22 mm | ||
Length 6.73mm | ||
Automotive Standard No | ||
- Land van herkomst:
- TW
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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