Infineon HEXFET Type N-Channel MOSFET, 30 A, 200 V Enhancement, 3-Pin TO-247

RS-stocknr.:: 919-4810
Fabrikantnummer:: IRFP250NPBF
Fabrikant:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 30 A, 200 V Enhancement, 3-Pin TO-247

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Subtotaal (1 tube van 25 eenheden)*

€ 73,00

(excl. BTW)

€ 88,25

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

Op voorraad

150 stuk(s) klaar voor verzending vanaf een andere locatie
Plus verzending 4.175 stuk(s) vanaf 02 september 2026

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Aantal stuks	Per stuk	Per tube*
25 - 25	€ 2,92	€ 73,00
50 - 100	€ 2,775	€ 69,38
125 +	€ 2,658	€ 66,45

*prijsindicatie

RS-stocknr.:: 919-4810
Fabrikantnummer:: IRFP250NPBF
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	30A
	Maximum Drain Source Voltage Vds	200V
	Package Type	TO-247
	Series	HEXFET
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	75mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	214W
	Forward Voltage Vf	1.3V
	Maximum Gate Source Voltage Vgs	20V
	Typical Gate Charge Qg @ Vgs	123nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Height	20.3mm
	Standards/Approvals	No
	Length	15.9mm
	Width	5.3mm
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 30A
	Maximum Drain Source Voltage Vds 200V
	Package Type TO-247
	Series HEXFET
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 75mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 214W
	Forward Voltage Vf 1.3V
	Maximum Gate Source Voltage Vgs 20V
	Typical Gate Charge Qg @ Vgs 123nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Height 20.3mm
	Standards/Approvals No
	Length 15.9mm
	Width 5.3mm
	Automotive Standard No

Land van herkomst:: MX

Infineon HEXFET Series MOSFET, 30A Maximum Continuous Drain Current, 214W Maximum Power Dissipation - IRFP250NPBF

This power MOSFET is engineered for high performance across various electronic applications. As an N-channel MOSFET, it efficiently enhances current flow when voltage is applied. It is notable for its capacity to manage high current levels while maintaining low on-resistance, which makes it suitable for power-intensive applications.

Features & Benefits

• Continuous drain current rating of 30A supports robust performance

• Power dissipation capacity of 214W accommodates heavy-duty applications

• Maximum drain-source voltage of 200V contributes to device reliability

• Low Rds(on) of 75 mΩ minimises energy loss during operation

• Enhancement mode improves control and efficiency in circuit applications

• Compatible with TO-247AC package for seamless integration into existing systems

Applications

• Power supplies for industrial automation

• Driving high-current loads in electronic circuits

• Converters and inverters in renewable energy systems

• Motor control requiring fast switching

How does this MOSFET handle high temperatures?

With a maximum operating temperature of +175°C, it functions effectively in high-thermal environments, ensuring consistent performance under stress.

What are the implications of the specified on-resistance?

A low Rds(on) of 75 mΩ results in reduced power losses, enhancing overall efficiency and decreasing heat generation during use.

Is this device suitable for pulsed applications?

Yes, it can handle pulsed drain currents up to 120A, making it appropriate for short-duration, high-current applications.

How does it manage gate voltage during operation?

The device accommodates a range of gate-to-source voltages from -20 V to +20 V, providing flexibility in various control circuits.

What is the significance of the avalanche ratings?

The single pulse avalanche energy rating of 315 mJ indicates its capability to endure brief energy surges, safeguarding it under fault conditions.