Infineon StrongIRFET Type N-Channel MOSFET, 195 A, 40 V Enhancement, 3-Pin TO-247
- RS-stocknr.:
- 124-9048
- Fabrikantnummer:
- IRFP7430PBF
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 tube van 25 eenheden)*
€ 66,20
(excl. BTW)
€ 80,10
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 75 stuk(s) vanaf 30 december 2025
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 25 - 25 | € 2,648 | € 66,20 |
| 50 - 100 | € 2,516 | € 62,90 |
| 125 - 225 | € 2,41 | € 60,25 |
| 250 - 475 | € 2,304 | € 57,60 |
| 500 + | € 2,145 | € 53,63 |
*prijsindicatie
- RS-stocknr.:
- 124-9048
- Fabrikantnummer:
- IRFP7430PBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 195A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-247 | |
| Series | StrongIRFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.3mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 366W | |
| Typical Gate Charge Qg @ Vgs | 460nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 5.31 mm | |
| Height | 20.7mm | |
| Length | 15.87mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 195A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-247 | ||
Series StrongIRFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.3mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 366W | ||
Typical Gate Charge Qg @ Vgs 460nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 5.31 mm | ||
Height 20.7mm | ||
Length 15.87mm | ||
Automotive Standard No | ||
- Land van herkomst:
- MX
StrongIRFET™ Power MOSFET, Infineon
Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness Ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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