Toshiba DTMOSIV Type N-Channel MOSFET, 9.7 A, 600 V Enhancement, 3-Pin TO-220 TK10A60W,S4VX(M
- RS-stocknr.:
- 125-0532
- Artikelnummer Distrelec:
- 304-24-218
- Fabrikantnummer:
- TK10A60W,S4VX(M
- Fabrikant:
- Toshiba
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 8,11
(excl. BTW)
€ 9,815
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 20 | € 1,622 | € 8,11 |
| 25 - 45 | € 1,054 | € 5,27 |
| 50 - 120 | € 1,024 | € 5,12 |
| 125 - 245 | € 0,998 | € 4,99 |
| 250 + | € 0,972 | € 4,86 |
*prijsindicatie
- RS-stocknr.:
- 125-0532
- Artikelnummer Distrelec:
- 304-24-218
- Fabrikantnummer:
- TK10A60W,S4VX(M
- Fabrikant:
- Toshiba
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Toshiba | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 9.7A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220 | |
| Series | DTMOSIV | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 380mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.7V | |
| Maximum Power Dissipation Pd | 30W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Typical Gate Charge Qg @ Vgs | 20nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 15mm | |
| Length | 10mm | |
| Standards/Approvals | No | |
| Width | 4.5 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Toshiba | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 9.7A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220 | ||
Series DTMOSIV | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 380mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.7V | ||
Maximum Power Dissipation Pd 30W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Typical Gate Charge Qg @ Vgs 20nC | ||
Maximum Operating Temperature 150°C | ||
Height 15mm | ||
Length 10mm | ||
Standards/Approvals No | ||
Width 4.5 mm | ||
Automotive Standard No | ||
- Land van herkomst:
- JP
MOSFET Transistors, Toshiba
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