Toshiba DTMOSIV Type N-Channel MOSFET, 31 A, 600 V Enhancement, 3-Pin TO-220 TK31A60W,S4VX(M
- RS-stocknr.:
- 891-2954
- Fabrikantnummer:
- TK31A60W,S4VX(M
- Fabrikant:
- Toshiba
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 2 eenheden)*
€ 6,41
(excl. BTW)
€ 7,756
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 12 stuk(s) vanaf 29 december 2025
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 8 | € 3,205 | € 6,41 |
| 10 - 18 | € 2,42 | € 4,84 |
| 20 - 48 | € 2,08 | € 4,16 |
| 50 - 98 | € 2,05 | € 4,10 |
| 100 + | € 2,02 | € 4,04 |
*prijsindicatie
- RS-stocknr.:
- 891-2954
- Fabrikantnummer:
- TK31A60W,S4VX(M
- Fabrikant:
- Toshiba
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Toshiba | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 31A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220 | |
| Series | DTMOSIV | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 88mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 45W | |
| Typical Gate Charge Qg @ Vgs | 86nC | |
| Forward Voltage Vf | -1.7V | |
| Maximum Operating Temperature | 150°C | |
| Height | 15mm | |
| Standards/Approvals | No | |
| Width | 4.5 mm | |
| Length | 10mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Toshiba | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 31A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220 | ||
Series DTMOSIV | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 88mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 45W | ||
Typical Gate Charge Qg @ Vgs 86nC | ||
Forward Voltage Vf -1.7V | ||
Maximum Operating Temperature 150°C | ||
Height 15mm | ||
Standards/Approvals No | ||
Width 4.5 mm | ||
Length 10mm | ||
Automotive Standard No | ||
- Land van herkomst:
- MY
MOSFET N-Channel, TK3x Series, Toshiba
MOSFET Transistors, Toshiba
Gerelateerde Links
- Toshiba TK N-Channel MOSFET 600 VS4VX(M
- Toshiba TK N-Channel MOSFET 600 VS4VX(M
- N-Channel MOSFET 600 VS4VX(M
- Toshiba DTMOSIV N-Channel MOSFET 600 VS4VX(M
- Toshiba TK N-Channel MOSFET 600 VS5VX(M
- Toshiba TK N-Channel MOSFET 600 VS5VX(M
- Toshiba TK N-Channel MOSFET 600 VS1VX(S
- Toshiba TK N-Channel MOSFET 600 VS1VQ(O
