Infineon HEXFET Type N-Channel MOSFET, 180 A, 40 V Enhancement, 3-Pin TO-252 IRFR7440TRPBF

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RS-stocknr.:
130-0989
Fabrikantnummer:
IRFR7440TRPBF
Fabrikant:
Infineon
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Merk

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

180A

Maximum Drain Source Voltage Vds

40V

Package Type

TO-252

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

2.4mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

140W

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

89nC

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Width

2.39 mm

Height

6.22mm

Length

6.73mm

Standards/Approvals

No

Distrelec Product Id

304-36-990

Automotive Standard

No

N-Channel Power MOSFET 40V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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