Infineon HEXFET N-Channel MOSFET, 33 A, 150 V Enhancement TO-252 IRFR4615TRLPBF

RS-stocknr.:: 257-5867
Fabrikantnummer:: IRFR4615TRLPBF
Fabrikant:: Infineon

Infineon HEXFET N-Channel MOSFET, 33 A, 150 V Enhancement TO-252 IRFR4615TRLPBF

Bulkkorting beschikbaar

Bekijk bulkkorting

Subtotaal (1 verpakking van 5 eenheden)*

€ 12,02

(excl. BTW)

€ 14,54

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

Op voorraad

Plus verzending 1.865 stuk(s) vanaf 02 november 2026

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per verpakking*
5 - 45	€ 2,404	€ 12,02
50 - 120	€ 2,162	€ 10,81
125 - 245	€ 2,024	€ 10,12
250 - 495	€ 1,88	€ 9,40
500 +	€ 1,204	€ 6,02

*prijsindicatie

RS-stocknr.:: 257-5867
Fabrikantnummer:: IRFR4615TRLPBF
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	33A
	Maximum Drain Source Voltage Vds	150V
	Series	HEXFET
	Package Type	TO-252
	Mount Type	PCB
	Maximum Drain Source Resistance Rds	42mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	1.3V
	Maximum Power Dissipation Pd	144W
	Typical Gate Charge Qg @ Vgs	26nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 33A
	Maximum Drain Source Voltage Vds 150V
	Series HEXFET
	Package Type TO-252
	Mount Type PCB
	Maximum Drain Source Resistance Rds 42mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf 1.3V
	Maximum Power Dissipation Pd 144W
	Typical Gate Charge Qg @ Vgs 26nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IRFR4615TRLPBF

Infineon HEXFET Series MOSFET, 150V Maximum Drain-Source Voltage, 33A Maximum Continuous Drain Current - IRFR4615TRLPBF

This MOSFET is a high-voltage N-channel enhancement-mode transistor designed for PCB mounting in power switching roles. It handles substantial continuous current while operating across a wide ambient temperature range and is suitable where controlled gate drive and thermal management are required.

Features and Benefits:

• 42mΩ Rds(on) reduces conduction losses
• 150V Vds enables high-voltage switching
• 33A continuous current supports heavy loads
• 144W power dissipation allows sustained operation
• 26nC gate charge permits responsive switching

Applications

• Suitable for high-voltage DC-DC converters
• Ideal for power switching in inverters
• Used with motor-drive stages requiring high current
• Can be used for telecoms power supplies
• Suitable for industrial power management modules

What gate drive limits must be observed?

The gate-to-source rating is ±20V so gate drive amplitudes must remain within that range to avoid damage.

How does thermal performance affect mounting choices?

With a 144W dissipation rating, effective PCB copper areas or heatsinking are required to manage junction temperatures during sustained load.

What temperature extremes can the device tolerate?

It operates over a range from -55°C up to 175°C, allowing use in environments with wide thermal variation.

Is this component suitable for automotive qualification?

It is not specified as automotive-grade

conformity noted is RoHS only.