Infineon HEXFET N-Channel MOSFET, 42 A, 55 V Enhancement, 3-Pin TO-252
- RS-stocknr.:
- 215-2606
- Fabrikantnummer:
- IRLR2905TRLPBF
- Fabrikant:
- Infineon
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We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.
- RS-stocknr.:
- 215-2606
- Fabrikantnummer:
- IRLR2905TRLPBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Series | HEXFET | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current (Id) | 42 A | |
| Maximum Drain Source Voltage (Vds) | 55 V | |
| Channel Mode | Enhancement | |
| Pin Count | 3 | |
| Package Type | TO-252 | |
| Automotive Standard | No | |
| Forward Voltage (Vf) | 1.3 V | |
| Maximum Drain Source Resistance (Rds) | 27 mΩ | |
| Maximum Gate Source Voltage (Vgs) | 20 V | |
| Maximum Operating Temperature | 175 °C | |
| Maximum Power Dissipation (Pd) | 110 W | |
| Minimum Operating Temperature | -55 °C | |
| Mount Type | Surface | |
| Standards/Approvals | EIA-481, EIA-541 | |
| Typical Gate Charge (Qg) @ Vgs | 48 nC | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Series HEXFET | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current (Id) 42 A | ||
Maximum Drain Source Voltage (Vds) 55 V | ||
Channel Mode Enhancement | ||
Pin Count 3 | ||
Package Type TO-252 | ||
Automotive Standard No | ||
Forward Voltage (Vf) 1.3 V | ||
Maximum Drain Source Resistance (Rds) 27 mΩ | ||
Maximum Gate Source Voltage (Vgs) 20 V | ||
Maximum Operating Temperature 175 °C | ||
Maximum Power Dissipation (Pd) 110 W | ||
Minimum Operating Temperature -55 °C | ||
Mount Type Surface | ||
Standards/Approvals EIA-481, EIA-541 | ||
Typical Gate Charge (Qg) @ Vgs 48 nC | ||
The Infineon HEXFET Power MOSFET series has 55V maximum drain source voltage it is a single N-Channel HEXFET Power MOSFET in a D-Pak package type. The Infineon series fifth generation HEXFET from International rectifier utilize advanced processing techniques to achieve extremely low on resistance for Silicon area. This benefits, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFET are well known for, providing sufficient level device for, provides designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-pack is designed for surface mounting using vapour phase, infrared or wave soldering technique.
Advanced Process Technology
Ultra Low On-Resistance
Lead-Free
Fully avalanche rated
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