Infineon HEXFET Type N-Channel MOSFET, 71 A, 60 V Enhancement, 3-Pin TO-252 IRFR7546TRPBF

RS-stocknr.:: 130-0990
Fabrikantnummer:: IRFR7546TRPBF
Fabrikant:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 71 A, 60 V Enhancement, 3-Pin TO-252 IRFR7546TRPBF

Subtotaal (1 verpakking van 10 eenheden)*

€ 6,63

(excl. BTW)

€ 8,02

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 75,00

Op voorraad

Plus verzending 10.500 stuk(s) vanaf 30 december 2025

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per verpakking*
10 +	€ 0,663	€ 6,63

*prijsindicatie

RS-stocknr.:: 130-0990
Fabrikantnummer:: IRFR7546TRPBF
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	71A
	Maximum Drain Source Voltage Vds	60V
	Series	HEXFET
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	7.9mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	58nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	1.2V
	Maximum Power Dissipation Pd	99W
	Maximum Operating Temperature	175°C
	Width	2.39 mm
	Length	6.73mm
	Height	6.22mm
	Standards/Approvals	No
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 71A
	Maximum Drain Source Voltage Vds 60V
	Series HEXFET
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 7.9mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 58nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 1.2V
	Maximum Power Dissipation Pd 99W
	Maximum Operating Temperature 175°C
	Width 2.39 mm
	Length 6.73mm
	Height 6.22mm
	Standards/Approvals No
	Automotive Standard No

Infineon HEXFET Series MOSFET, 71A Maximum Continuous Drain Current, 99W Maximum Power Dissipation - IRFR7546TRPBF

This high-performance MOSFET is engineered for various applications that require efficient power management. With robust specifications, it is well-suited for scenarios demanding durability and highcurrent capabilities. It is commonly used in automation and electrical applications, showcasing exceptional performance characteristics across different environments.

Features & Benefits

• Maximum continuous drain current of 71A

• Rated for a maximum drain-source voltage of 60V

• Low on-resistance enhances efficiency in power delivery

• DPAK package designed for ease of surface mounting

• High power dissipation capability improves thermal management

• Enhancement mode operation optimises switching performance

Applications

• Suitable for brushed motor drive

• Useful in battery-powered circuit designs

• Employed in half-bridge and full-bridge topologies

• Effective in synchronous rectifier

• Applied in DC/DC and AC/DC power conversion systems

What is the thermal specification for continuous operation?

It supports a maximum power dissipation of 99W, ensuring efficient operation without overheating under suitable conditions.

How does it perform in high-temperature environments?

The device operates efficiently up to a maximum junction temperature of +175°C, making it applicable in challenging situations.

What mounting options are available for installation?

It features a surface mount design in a DPAK package, allowing for straightforward integration onto PCBs while saving space.

Is there a limitation on the gate voltage?

Yes, the gate-to-source voltage must not exceed ±20V to ensure safe operating conditions.

What measures enhance its reliability during operation?

Ruggedness is improved through avalanche and dynamic dV/dt protection features, ensuring dependable performance in various conditions.