Vishay TrenchFET Type P-Channel MOSFET, 8 A, 20 V Enhancement, 6-Pin TSOP SI3493DDV-T1-GE3
- RS-stocknr.:
- 134-9155
- Fabrikantnummer:
- SI3493DDV-T1-GE3
- Fabrikant:
- Vishay
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- RS-stocknr.:
- 134-9155
- Fabrikantnummer:
- SI3493DDV-T1-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | TSOP | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 51mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 3.6W | |
| Typical Gate Charge Qg @ Vgs | 34.8nC | |
| Maximum Gate Source Voltage Vgs | -8V, +8V | |
| Forward Voltage Vf | -1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 1mm | |
| Width | 1.7mm | |
| Standards/Approvals | No | |
| Length | 3.1mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type TSOP | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 51mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 3.6W | ||
Typical Gate Charge Qg @ Vgs 34.8nC | ||
Maximum Gate Source Voltage Vgs -8V, +8V | ||
Forward Voltage Vf -1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 1mm | ||
Width 1.7mm | ||
Standards/Approvals No | ||
Length 3.1mm | ||
Automotive Standard No | ||
P-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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