Fabrikantnummer

Vishay Dual TrenchFET 2 Type P, Type N-Channel MOSFET, 4 A, 20 V Enhancement, 8-Pin TSOP SI5515CDC-T1-GE3

RS-stocknr.:: 180-7304
Fabrikantnummer:: SI5515CDC-T1-GE3
Fabrikant:: Vishay

Vishay Dual TrenchFET 2 Type P, Type N-Channel MOSFET, 4 A, 20 V Enhancement, 8-Pin TSOP SI5515CDC-T1-GE3

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RS-stocknr.:: 180-7304
Fabrikantnummer:: SI5515CDC-T1-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Product Type	MOSFET
	Channel Type	Type P, Type N
	Maximum Continuous Drain Current Id	4A
	Maximum Drain Source Voltage Vds	20V
	Series	TrenchFET
	Package Type	TSOP
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.156
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	7.5nC
	Maximum Gate Source Voltage Vgs	8V
	Maximum Power Dissipation Pd	3.1W
	Maximum Operating Temperature	150°C
	Transistor Configuration	Dual
	Standards/Approvals	No
	Width	1.65mm
	Length	3.05mm
	Height	1mm
	Number of Elements per Chip	2
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Product Type MOSFET
	Channel Type Type P, Type N
	Maximum Continuous Drain Current Id 4A
	Maximum Drain Source Voltage Vds 20V
	Series TrenchFET
	Package Type TSOP
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.156
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 7.5nC
	Maximum Gate Source Voltage Vgs 8V
	Maximum Power Dissipation Pd 3.1W
	Maximum Operating Temperature 150°C
	Transistor Configuration Dual
	Standards/Approvals No
	Width 1.65mm
	Length 3.05mm
	Height 1mm
	Number of Elements per Chip 2
	Automotive Standard No

Datasheet

Land van herkomst:: CN

Vishay MOSFET

The Vishay surface mount dual channel (both P and N-channels) MOSFET is a new age product with a drain-source voltage of 20V and drain-source resistance of 36mohm at a gate-source voltage of 4.5V. It has a maximum power rating of 3.1W. The MOSFET has a continuous drain current of 4A. It has application in load switches for portable devices. MOSFET has been optimized, for lower switching and conduction losses.

Features and Benefits

• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• IEC 61249-2-21

• Rg tested

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