onsemi NVD5C668NL Type N-Channel MOSFET, 49 A, 60 V Enhancement, 3-Pin TO-252 NVD5C668NLT4G
- RS-stocknr.:
- 141-7216
- Fabrikantnummer:
- NVD5C668NLT4G
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 10,87
(excl. BTW)
€ 13,155
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tekort aan aanbod
- Plus verzending 14.460 stuk(s) vanaf 19 januari 2026
Onze huidige voorraad is beperkt en onze leveranciers verwachten tekorten.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 2,174 | € 10,87 |
| 50 - 95 | € 1,874 | € 9,37 |
| 100 - 495 | € 1,624 | € 8,12 |
| 500 - 995 | € 1,428 | € 7,14 |
| 1000 + | € 1,30 | € 6,50 |
*prijsindicatie
- RS-stocknr.:
- 141-7216
- Fabrikantnummer:
- NVD5C668NLT4G
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 49A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | NVD5C668NL | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 12.8mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 44W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 18.7nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Height | 2.38mm | |
| Width | 6.22 mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 49A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series NVD5C668NL | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 12.8mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 44W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 18.7nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Height 2.38mm | ||
Width 6.22 mm | ||
Automotive Standard AEC-Q101 | ||
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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