ROHM BSM 2 Type N-Channel SiC Power Module Enhancement, 4-Pin BSM180D12P3C007
- RS-stocknr.:
- 144-2254
- Fabrikantnummer:
- BSM180D12P3C007
- Fabrikant:
- ROHM
Subtotaal (1 tray van 12 eenheden)*
€ 6.957,624
(excl. BTW)
€ 8.418,72
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw
Aantal stuks | Per stuk | Per tray* |
|---|---|---|
| 12 + | € 579,802 | € 6.957,62 |
*prijsindicatie
- RS-stocknr.:
- 144-2254
- Fabrikantnummer:
- BSM180D12P3C007
- Fabrikant:
- ROHM
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | ROHM | |
| Product Type | SiC Power Module | |
| Channel Type | Type N | |
| Series | BSM | |
| Pin Count | 4 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 122mm | |
| Width | 45.6 mm | |
| Height | 17mm | |
| Number of Elements per Chip | 2 | |
| Alles selecteren | ||
|---|---|---|
Merk ROHM | ||
Product Type SiC Power Module | ||
Channel Type Type N | ||
Series BSM | ||
Pin Count 4 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Length 122mm | ||
Width 45.6 mm | ||
Height 17mm | ||
Number of Elements per Chip 2 | ||
- Land van herkomst:
- JP
SiC Power Modules, ROHM
The Module consists of a Silicon-Carbide (SiC) DMOS Power FET Devices with a Schottky Barrier Diode (SBD) across the Drain and Source.
Half-Bridge configuration
Low Surge Current
Low Power Switching Losses
High-Speed Switching
Low Operating Temperature
MOSFET Transistors, ROHM Semiconductor
Note
BSM180D12P2C101 SiC Power Module does not include Schottky Barrier Diodes.
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