Name: ROHM BSM Dual SiC N-Channel SiC Power Module, 180 A, 1200 V, 4-Pin C BSM180D12P3C007
Brand: ROHM
SKU: 144-2254
Price: 701.56 EUR
Availability: OutOfStock

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	ROHM
	Channel Type	N
	Maximum Continuous Drain Current	180 A
	Maximum Drain Source Voltage	1200 V
	Series	BSM
	Package Type	C
	Mounting Type	Surface Mount
	Pin Count	4
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	5.6V
	Minimum Gate Threshold Voltage	2.7V
	Maximum Power Dissipation	880 W
	Transistor Material	SiC
	Maximum Operating Temperature	+150 °C
	Width	45.6mm
	Number of Elements per Chip	2
	Length	122mm
	Height	17mm
	Minimum Operating Temperature	-40 °C

	Alles selecteren
	Merk ROHM
	Channel Type N
	Maximum Continuous Drain Current 180 A
	Maximum Drain Source Voltage 1200 V
	Series BSM
	Package Type C
	Mounting Type Surface Mount
	Pin Count 4
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 5.6V
	Minimum Gate Threshold Voltage 2.7V
	Maximum Power Dissipation 880 W
	Transistor Material SiC
	Maximum Operating Temperature +150 °C
	Width 45.6mm
	Number of Elements per Chip 2
	Length 122mm
	Height 17mm
	Minimum Operating Temperature -40 °C

Land van herkomst:: JP

SiC Power Modules, ROHM

The Module consists of a Silicon-Carbide (SiC) DMOS Power FET Devices with a Schottky Barrier Diode (SBD) across the Drain and Source.

Half-Bridge configuration

Low Surge Current

Low Power Switching Losses

High-Speed Switching

Low Operating Temperature

MOSFET Transistors, ROHM Semiconductor

Note

BSM180D12P2C101 SiC Power Module does not include Schottky Barrier Diodes.

ROHM BSM Dual SiC N-Channel SiC Power Module, 180 A, 1200 V, 4-Pin C BSM180D12P3C007

SiC Power Modules, ROHM

MOSFET Transistors, ROHM Semiconductor

Note

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