Toshiba Type P-Channel MOSFET, 4 A, 30 V Enhancement, 3-Pin SOT-23 SSM3J334R,LF(T
- RS-stocknr.:
- 144-5260
- Fabrikantnummer:
- SSM3J334R,LF(T
- Fabrikant:
- Toshiba
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 30 eenheden)*
€ 5,10
(excl. BTW)
€ 6,30
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 120 stuk(s) vanaf 29 december 2025
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 30 - 120 | € 0,17 | € 5,10 |
| 150 + | € 0,162 | € 4,86 |
*prijsindicatie
- RS-stocknr.:
- 144-5260
- Fabrikantnummer:
- SSM3J334R,LF(T
- Fabrikant:
- Toshiba
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Toshiba | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 136mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 2W | |
| Typical Gate Charge Qg @ Vgs | 5.9nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.8mm | |
| Standards/Approvals | No | |
| Length | 2.9mm | |
| Width | 1.8 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Toshiba | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 136mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 2W | ||
Typical Gate Charge Qg @ Vgs 5.9nC | ||
Maximum Operating Temperature 150°C | ||
Height 0.8mm | ||
Standards/Approvals No | ||
Length 2.9mm | ||
Width 1.8 mm | ||
Automotive Standard No | ||
- Land van herkomst:
- JP
MOSFET P-Channel, SSM3J Series, Toshiba
MOSFET Transistors, Toshiba
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