Toshiba Type P-Channel MOSFET, 2 A, 60 V, 3-Pin SOT-23
- RS-stocknr.:
- 236-3572
- Fabrikantnummer:
- SSM3J356R,LF(T
- Fabrikant:
- Toshiba
Subtotaal (1 rol van 3000 eenheden)*
€ 330,00
(excl. BTW)
€ 390,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 11 mei 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 3000 + | € 0,11 | € 330,00 |
*prijsindicatie
- RS-stocknr.:
- 236-3572
- Fabrikantnummer:
- SSM3J356R,LF(T
- Fabrikant:
- Toshiba
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Toshiba | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 2A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 400mΩ | |
| Forward Voltage Vf | 0.9V | |
| Maximum Power Dissipation Pd | 2W | |
| Maximum Gate Source Voltage Vgs | -20 V | |
| Typical Gate Charge Qg @ Vgs | 8.3nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 2.9 mm | |
| Length | 2.4mm | |
| Height | 0.8mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Toshiba | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 2A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 400mΩ | ||
Forward Voltage Vf 0.9V | ||
Maximum Power Dissipation Pd 2W | ||
Maximum Gate Source Voltage Vgs -20 V | ||
Typical Gate Charge Qg @ Vgs 8.3nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 2.9 mm | ||
Length 2.4mm | ||
Height 0.8mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Toshiba field effect transistor made up of the silicon material and having P channel MOS type. It is mainly used in power management switching applications.
Storage temperature range −55 to 150 °C
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