Vishay E Type N-Channel MOSFET, 29 A, 600 V Enhancement, 3-Pin TO-263

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Subtotaal (1 tube van 50 eenheden)*

€ 222,45

(excl. BTW)

€ 269,15

(incl. BTW)

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  • Plus verzending 650 stuk(s) vanaf 29 december 2025
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Aantal stuks
Per stuk
Per tube*
50 - 50€ 4,449€ 222,45
100 - 200€ 4,182€ 209,10
250 +€ 3,782€ 189,10

*prijsindicatie

RS-stocknr.:
145-1820
Fabrikantnummer:
SIHB30N60E-GE3
Fabrikant:
Vishay
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Merk

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

29A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-263

Series

E

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

125mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

85nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

250W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

4.83mm

Length

10.67mm

Width

9.65 mm

Automotive Standard

No

Land van herkomst:
CN

N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor


The E Series Power MOSFETs from Vishay are high-voltage transistors featuring ultra-low maximum on-resistance, low figure of merit and fast switching. They are available in a wide range of current ratings. Typical applications include servers and telecom power supplies, LED lighting, flyback converters, power factor correction (PFC) and switch mode power supplies (SMPS).

Features


Low figure-of-merit (FOM) RDS(on) x Qg

Low input capacitance (Ciss)

Low on-resistance (RDS(on))

Ultra-low gate charge (Qg)

Fast switching

Reduced switching and conduction losses

MOSFET Transistors, Vishay Semiconductor


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