Fabrikantnummer

Vishay E Type N-Channel MOSFET, 29 A, 600 V Enhancement, 3-Pin TO-263 SIHB30N60E-GE3

RS-stocknr.:: 768-9310
Fabrikantnummer:: SIHB30N60E-GE3
Fabrikant:: Vishay

Bulkkorting beschikbaar

Subtotaal (1 eenheid)*

€ 5,96

(excl. BTW)

€ 7,21

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 75,00

Op voorraad

Plus verzending 32 stuk(s) vanaf 29 december 2025
Plus verzending 364 stuk(s) vanaf 29 december 2025
Plus verzending 689 stuk(s) vanaf 05 januari 2026

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Aantal stuks	Per stuk
1 - 9	€ 5,96
10 - 49	€ 5,36
50 - 99	€ 4,78
100 - 249	€ 4,48
250 +	€ 4,16

*prijsindicatie

RS-stocknr.:: 768-9310
Fabrikantnummer:: SIHB30N60E-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	29A
	Maximum Drain Source Voltage Vds	600V
	Series	E
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	125mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	85nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	250W
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	150°C
	Width	9.65 mm
	Height	4.83mm
	Standards/Approvals	No
	Length	10.67mm
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 29A
	Maximum Drain Source Voltage Vds 600V
	Series E
	Package Type TO-263
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 125mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 85nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 250W
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 150°C
	Width 9.65 mm
	Height 4.83mm
	Standards/Approvals No
	Length 10.67mm
	Automotive Standard No

N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor

The E Series Power MOSFETs from Vishay are high-voltage transistors featuring ultra-low maximum on-resistance, low figure of merit and fast switching. They are available in a wide range of current ratings. Typical applications include servers and telecom power supplies, LED lighting, flyback converters, power factor correction (PFC) and switch mode power supplies (SMPS).

Features

Low figure-of-merit (FOM) RDS(on) x Qg

Low input capacitance (Ciss)

Low on-resistance (RDS(on))

Ultra-low gate charge (Qg)

Fast switching

Reduced switching and conduction losses

Vishay E Type N-Channel MOSFET, 29 A, 600 V Enhancement, 3-Pin TO-263 SIHB30N60E-GE3

GRATIS bezorging voor bestellingen van meer dan € 75,00

N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor

Features

MOSFET Transistors, Vishay Semiconductor

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