Infineon OptiMOS™ 3 N-Channel MOSFET, 100 A, 120 V, 3-Pin TO-220 IPP048N12N3GXKSA1

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RS-stocknr.:
145-8728
Fabrikantnummer:
IPP048N12N3GXKSA1
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

120 V

Series

OptiMOS™ 3

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

4.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

137 nC @ 10 V

Length

10.36mm

Width

4.57mm

Number of Elements per Chip

1

Transistor Material

Si

Forward Diode Voltage

1.2V

Minimum Operating Temperature

-55 °C

Height

15.95mm

Land van herkomst:
CN

Infineon OptiMOS™3 Power MOSFETs, 100V and over



MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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