Infineon StrongIRFET Type N-Channel MOSFET, 195 A, 60 V Enhancement, 3-Pin TO-247

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€ 47,80

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€ 57,85

(incl. BTW)

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25 - 25€ 1,912€ 47,80
50 - 100€ 1,816€ 45,40
125 - 225€ 1,74€ 43,50
250 - 475€ 1,663€ 41,58
500 +€ 1,548€ 38,70

*prijsindicatie

RS-stocknr.:
145-9658
Fabrikantnummer:
IRFP7530PBF
Fabrikant:
Infineon
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Merk

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

195A

Maximum Drain Source Voltage Vds

60V

Series

StrongIRFET

Package Type

TO-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

2mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

274nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

341W

Maximum Operating Temperature

175°C

Standards/Approvals

No

Height

20.7mm

Length

15.87mm

Width

5.31 mm

Automotive Standard

No

Land van herkomst:
MX

Infineon StrongIRFET Series MOSFET, 195A Maximum Continuous Drain Current, 341W Maximum Power Dissipation - IRFP7530PBF


This MOSFET is intended for high-performance power management applications, offering features that support a variety of electronic systems. It facilitates efficient energy transfer and minimises power loss, making it a VITAL component in Advanced circuits used in automation and motor control.

Features & Benefits


• Continuous drain current of 195A improves operational efficiency

• Maximum drain-source voltage of 60V accommodates diverse applications

• Low on-resistance of 2mΩ reduces power dissipation

• Withstands extreme temperatures ranging from -55°C to +175°C

• Gate threshold voltage of 2.1V to 3.7V optimises switching performance

• High avalanche and dynamic dV/dt ruggedness enhances reliability

Applications


• Suitable for brushed motor drive

• Used in battery-powered circuits for enhanced efficiency

• Applicable in half-bridge and full-bridge configurations for flexible circuit design

• Effective in synchronous rectifier for improved efficiency

• Utilised in DC/DC and AC/DC converters within power electronics

What are the benefits of using it in high-current applications?


Employing this MOSFET in high-current conditions allows for effective power management while minimising heat generation due to its low on-resistance, thus ensuring stable performance in rigorous operations.

How does temperature affect performance?


Temperature influences operational limits, with a maximum junction temperature of 175°C ensuring functionality under severe conditions. Its thermal resistance properties help maintain reliability in high-temperature environments.

Can it be integrated into existing circuits?


Yes, its standard TO-247 package design permits easy integration into both new and existing circuit layouts, making it suitable for replacements or upgrades across various applications.

What should be considered for effective heat dissipation?


To uphold optimal performance, ensure appropriate cooling mechanisms are in place, as the maximum power dissipation is 341W. The use of heatsinks or fans can assist in managing temperature effectively.

Is it suitable for use in automotive applications?


Yes, its robust specifications meet the requirements of automotive applications, providing a suitable choice in high-temperature and high-power settings.

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