Nexperia Type N-Channel MOSFET, 3.2 A, 30 V Enhancement, 4-Pin DFN PMXB56ENZ

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€ 6,40

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€ 7,75

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RS-stocknr.:
153-1892
Fabrikantnummer:
PMXB56ENZ
Fabrikant:
Nexperia
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Merk

Nexperia

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

3.2A

Maximum Drain Source Voltage Vds

30V

Package Type

DFN

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

87mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

8.33W

Typical Gate Charge Qg @ Vgs

3.6nC

Maximum Operating Temperature

150°C

Length

1.15mm

Height

0.36mm

Width

1.05 mm

Standards/Approvals

No

Automotive Standard

No

N-channel MOSFETs 25 V - 30 V, Robust performance thanks to Advanced technology know-how, Easy-to-use MOSFETs in the 25 V to 30 V range. Perfect for space- and power-critical applications, they offer excellent switching performance and class-leading safe operating area (SOA). Need a different voltage rating? Check out the rest of our huge portfolio for more options.

30 V, N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Trench MOSFET technology

Leadless ultra small and thin SMD plastic package: 1.1 x 1.0 x 0.37 mm

Exposed drain pad for excellent thermal conduction

Very low Drain-Source on-state resistance RDSon = 49 mΩ

Very fast switching

Low-side load switch and charging switch for portable devices

Power management in battery-driven portables

LED driver

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