Vishay SQ Rugged Type N-Channel TrenchFET Power MOSFET, 6 A, 20 V Enhancement, 3-Pin SOT-23

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RS-stocknr.:
165-6982
Fabrikantnummer:
SQ2310ES-T1_BE3
Fabrikant:
Vishay
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Merk

Vishay

Product Type

TrenchFET Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

20V

Series

SQ Rugged

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.03Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±8 V

Typical Gate Charge Qg @ Vgs

8.5nC

Maximum Power Dissipation Pd

2W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Standards/Approvals

IEC 61249-2-21, RoHS: 2002/95/EC

Length

3.04mm

Width

1.4 mm

Height

1.02mm

Automotive Standard

AEC-Q101

N-Channel MOSFET, Automotive SQ Rugged Series, Vishay Semiconductor


The SQ series of MOSFETs from Vishay Semiconductor are designed for all automotive applications requiring ruggedness and high reliability.

Advantages of SQ Rugged Series MOSFETs


• AEC-Q101 qualified

• Junction temperature up to +175°C

• Low on-resistance n- and p-channel TrenchFET® technologies

• Innovative space-saving package options

MOSFET Transistors, Vishay Semiconductor


Approvals

AEC-Q101

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