Fabrikantnummer

Vishay SQ Rugged Type N-Channel TrenchFET Power MOSFET, 6 A, 20 V Enhancement, 3-Pin SOT-23 SQ2310ES-T1_BE3

RS-stocknr.:: 787-9443
Fabrikantnummer:: SQ2310ES-T1_BE3
Fabrikant:: Vishay

Vishay SQ Rugged Type N-Channel TrenchFET Power MOSFET, 6 A, 20 V Enhancement, 3-Pin SOT-23 SQ2310ES-T1_BE3

Bulkkorting beschikbaar

Subtotaal (1 verpakking van 10 eenheden)*

€ 7,01

(excl. BTW)

€ 8,48

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 75,00

Wordt opgeheven

60 stuk(s) klaar voor verzending vanaf een andere locatie
Laatste verzending 1.860 stuk(s) vanaf 06 januari 2026

Aantal stuks	Per stuk	Per verpakking*
10 - 90	€ 0,701	€ 7,01
100 - 240	€ 0,686	€ 6,86
250 - 490	€ 0,54	€ 5,40
500 - 990	€ 0,343	€ 3,43
1000 +	€ 0,308	€ 3,08

*prijsindicatie

RS-stocknr.:: 787-9443
Fabrikantnummer:: SQ2310ES-T1_BE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Product Type	TrenchFET Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	6A
	Maximum Drain Source Voltage Vds	20V
	Series	SQ Rugged
	Package Type	SOT-23
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.03Ω
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	±8 V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	2W
	Typical Gate Charge Qg @ Vgs	8.5nC
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	175°C
	Standards/Approvals	IEC 61249-2-21, RoHS: 2002/95/EC
	Width	1.4 mm
	Length	3.04mm
	Height	1.02mm
	Automotive Standard	AEC-Q101

	Alles selecteren
	Merk Vishay
	Product Type TrenchFET Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 6A
	Maximum Drain Source Voltage Vds 20V
	Series SQ Rugged
	Package Type SOT-23
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.03Ω
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs ±8 V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 2W
	Typical Gate Charge Qg @ Vgs 8.5nC
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 175°C
	Standards/Approvals IEC 61249-2-21, RoHS: 2002/95/EC
	Width 1.4 mm
	Length 3.04mm
	Height 1.02mm
	Automotive Standard AEC-Q101

N-Channel MOSFET, Automotive SQ Rugged Series, Vishay Semiconductor

The SQ series of MOSFETs from Vishay Semiconductor are designed for all automotive applications requiring ruggedness and high reliability.

Advantages of SQ Rugged Series MOSFETs

• AEC-Q101 qualified

• Junction temperature up to +175°C

• Low on-resistance n- and p-channel TrenchFET® technologies

• Innovative space-saving package options

MOSFET Transistors, Vishay Semiconductor

Approvals

AEC-Q101