Vishay SQ Rugged Type N-Channel TrenchFET Power MOSFET, 25 A, 60 V Enhancement, 3-Pin TO-252

Bekijk alle MOSFETs
Momenteel niet beschikbaar
We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.
RS-stocknr.:
170-8300
Fabrikantnummer:
SQD25N06-22L_GE3
Fabrikant:
Vishay
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren

Merk

Vishay

Channel Type

Type N

Product Type

TrenchFET Power MOSFET

Maximum Continuous Drain Current Id

25A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-252

Series

SQ Rugged

Mount Type

PCB

Pin Count

3

Maximum Drain Source Resistance Rds

0.022Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

50nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

62W

Forward Voltage Vf

1.5V

Maximum Operating Temperature

175°C

Height

2.38mm

Width

6.22 mm

Length

6.73mm

Standards/Approvals

IEC 61249-2-21, RoHS 2002/95/EC

Automotive Standard

AEC-Q101

N-Channel MOSFET, Automotive SQ Rugged Series, Vishay Semiconductor


The SQ series of MOSFETs from Vishay Semiconductor are designed for all automotive applications requiring ruggedness and high reliability.

Advantages of SQ Rugged Series MOSFETs


• AEC-Q101 qualified

• Junction temperature up to +175°C

• Low on-resistance n- and p-channel TrenchFET® technologies

• Innovative space-saving package options

MOSFET Transistors, Vishay Semiconductor


Approvals

AEC-Q101

Gerelateerde Links