Fabrikantnummer

onsemi QFET N-Channel MOSFET, 1.8 A, 800 V, 3-Pin DPAK FQD2N80TM

RS-stocknr.:: 166-1793
Fabrikantnummer:: FQD2N80TM
Fabrikant:: onsemi

onsemi QFET N-Channel MOSFET, 1.8 A, 800 V, 3-Pin DPAK FQD2N80TM

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RS-stocknr.:: 166-1793
Fabrikantnummer:: FQD2N80TM
Fabrikant:: onsemi

Specificaties

Datasheets

Wetgeving en compliance

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Alles selecteren	Attribuut	Waarde
	Merk	onsemi
	Channel Type	N
	Maximum Continuous Drain Current	1.8 A
	Maximum Drain Source Voltage	800 V
	Package Type	DPAK (TO-252)
	Series	QFET
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	6.3 Ω
	Channel Mode	Enhancement
	Minimum Gate Threshold Voltage	3V
	Maximum Power Dissipation	2.5 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-30 V, +30 V
	Width	6.1mm
	Typical Gate Charge @ Vgs	12 nC @ 10 V
	Number of Elements per Chip	1
	Length	6.6mm
	Transistor Material	Si
	Maximum Operating Temperature	+150 °C
	Minimum Operating Temperature	-55 °C
	Height	2.3mm

	Alles selecteren
	Merk onsemi
	Channel Type N
	Maximum Continuous Drain Current 1.8 A
	Maximum Drain Source Voltage 800 V
	Package Type DPAK (TO-252)
	Series QFET
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 6.3 Ω
	Channel Mode Enhancement
	Minimum Gate Threshold Voltage 3V
	Maximum Power Dissipation 2.5 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -30 V, +30 V
	Width 6.1mm
	Typical Gate Charge @ Vgs 12 nC @ 10 V
	Number of Elements per Chip 1
	Length 6.6mm
	Transistor Material Si
	Maximum Operating Temperature +150 °C
	Minimum Operating Temperature -55 °C
	Height 2.3mm

onsemi QFET N-Channel MOSFET, 1.8 A, 800 V, 3-Pin DPAK FQD2N80TM

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