Vishay E Type N-Channel Power MOSFET, 19 A, 500 V Enhancement, 3-Pin TO-247AC SIHG20N50E-GE3

RS-stocknr.:: 169-5791
Fabrikantnummer:: SIHG20N50E-GE3
Fabrikant:: Vishay

Vishay E Type N-Channel Power MOSFET, 19 A, 500 V Enhancement, 3-Pin TO-247AC SIHG20N50E-GE3

Subtotaal (1 tube van 25 eenheden)*

€ 63,30

(excl. BTW)

€ 76,60

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

Op voorraad

175 stuk(s) klaar voor verzending vanaf een andere locatie

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per tube*
25 +	€ 2,532	€ 63,30

*prijsindicatie

RS-stocknr.:: 169-5791
Fabrikantnummer:: SIHG20N50E-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	19A
	Maximum Drain Source Voltage Vds	500V
	Package Type	TO-247AC
	Series	E
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	184mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Maximum Power Dissipation Pd	179W
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	30V
	Typical Gate Charge Qg @ Vgs	46nC
	Maximum Operating Temperature	150°C
	Width	5.31mm
	Length	15.87mm
	Height	20.82mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 19A
	Maximum Drain Source Voltage Vds 500V
	Package Type TO-247AC
	Series E
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 184mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Maximum Power Dissipation Pd 179W
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 30V
	Typical Gate Charge Qg @ Vgs 46nC
	Maximum Operating Temperature 150°C
	Width 5.31mm
	Length 15.87mm
	Height 20.82mm
	Standards/Approvals RoHS
	Automotive Standard No

Land van herkomst:: CN

Vishay Series E Power MOSFET, 500V Drain Source Voltage, 19A Maximum Continuous Drain Current - SIHG20N50E-GE3

This power MOSFET is a high-voltage N-channel transistor designed for switching and power conversion in industrial and electrical systems. It operates in enhancement mode and is supplied in a through-hole TO-247 package, making it suitable for assemblies that require robust mounting and straightforward thermal management. The device supports high drain-source voltage and is intended for applications demanding elevated power handling and gate drive capabilities.

Features and Benefits:

• 500V maximum Vds enabling high-voltage switching capability
• 19 A continuous drain current for substantial load handling
• 184 mΩ Rds(on) for reduced conduction losses
• 46 nC typical gate charge allowing predictable drive requirements
• 179W maximum power dissipation for high thermal stress management
• 30V maximum gate-source voltage for wide gate‑drive compatibility

Applications

• Suitable for high-voltage DC-DC converters in power systems
• Ideal for industrial motor drive switching stages
• Used with power supplies for telecoms and infrastructure equipment
• Can be used for hard-switching topologies in inverters
• Suitable for laboratory and prototyping through-hole power designs

What temperature range can it reliably operate within?

The device is rated for a minimum ambient of -55 °C and a maximum operating temperature of 150 °C, accommodating a wide range of environmental conditions.

How does the package support mounting and heat removal?

The TO-247 through-hole package provides a large tab area for heatsinking and secure PCB or chassis mounting to facilitate thermal management in high-dissipation applications.

What gate‑drive limits should be observed during design?

Gate-source voltage must not exceed 30V to avoid gate oxide stress, and designers should size the driver to handle the typical 46 nC gate charge for controlled switching.

Are there considerations for switching losses with this device?

Designers should account for both the 184 mΩ conduction loss in the on-state and dynamic losses related to the 46 nC gate charge when calculating total switching energy.