Vishay E Type N-Channel Power MOSFET, 17.4 A, 800 V Enhancement, 3-Pin TO-247AC SIHG21N80AE-GE3

RS-stocknr.:: 188-4989
Artikelnummer Distrelec:: 304-38-848
Fabrikantnummer:: SIHG21N80AE-GE3
Fabrikant:: Vishay

Vishay E Type N-Channel Power MOSFET, 17.4 A, 800 V Enhancement, 3-Pin TO-247AC SIHG21N80AE-GE3

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RS-stocknr.:: 188-4989
Artikelnummer Distrelec:: 304-38-848
Fabrikantnummer:: SIHG21N80AE-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	17.4A
	Maximum Drain Source Voltage Vds	800V
	Package Type	TO-247AC
	Series	E
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	235mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	48nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	179W
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	30V
	Maximum Operating Temperature	150°C
	Height	20.82mm
	Standards/Approvals	RoHS
	Width	5.31mm
	Length	15.87mm
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 17.4A
	Maximum Drain Source Voltage Vds 800V
	Package Type TO-247AC
	Series E
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 235mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 48nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 179W
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 30V
	Maximum Operating Temperature 150°C
	Height 20.82mm
	Standards/Approvals RoHS
	Width 5.31mm
	Length 15.87mm
	Automotive Standard No

Datasheet SIHG21N80AE-GE3

Vishay Series E Power MOSFET, 800V Drain Source Voltage, 17.4A Drain Current - SIHG21N80AE-GE3

This power MOSFET is a high-voltage N-channel transistor designed for switching and power-conversion tasks in industrial environments. It operates across a wide temperature range, supports substantial continuous current, and is supplied in a through-hole TO-247AC package suitable for applications requiring robust mounting and straightforward thermal interfacing.

Features and Benefits:

• 800V blocking capability enabling high-voltage system design • 17.4 A continuous drain current for substantial load handling • 235 mΩ Rds(on) to reduce conduction losses under load • 48 nC typical gate charge for predictable switching performance • 179W power dissipation capacity for demanding power stages • Rated to 150 °C for elevated-temperature operation

Applications

• Suitable for industrial motor-drive inverter stages • Ideal for high-voltage power supplies and converters • Used for renewable-energy inverter and PV optimiser designs • Can be used for traction and utility power electronics • Suitable for hard-switched and soft-switched semiconductor stages

What mounting considerations apply for thermal management?

The through-hole TO-247AC format enables direct bolting to heatsinks and effective use of insulating pads or thermal compound to transfer dissipated power to external cooling.

How does the gate-source voltage rating affect gate-drive design?

With a maximum gate-source allowance of 30 V, gate drivers should be selected to operate within this window and provide sufficient drive to achieve the specified gate charge without exceeding the voltage limit.

What environmental extremes can it tolerate during operation?

The device is specified to function down to -55 °C and up to 150 °C, permitting use in installations with wide ambient and junction temperature excursions.

Which electrical parameter dictates switching-energy considerations?

The typical gate charge of 48 nC combined with the device’s on-resistance and voltage rating primarily determines energy losses during turn-on and turn-off events.