Toshiba N-Channel MOSFET, 300 A, 30 V, 8-Pin DSOP TPWR8503NL

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Verpakkingsopties
RS-stocknr.:
171-2373
Fabrikantnummer:
TPWR8503NL
Fabrikant:
Toshiba
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Merk

Toshiba

Channel Type

N

Maximum Continuous Drain Current

300 A

Maximum Drain Source Voltage

30 V

Package Type

DSOP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

1.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Minimum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

142 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

5mm

Number of Elements per Chip

1

Length

5mm

Typical Gate Charge @ Vgs

74 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

0.73mm

Forward Diode Voltage

1.2V

Vrijgesteld

High-Efficiency DC-DC Converters
Switching Voltage Regulators
High-speed switching
Small gate charge: QSW = 16 nC (typ.)
Low drain-source on-resistance: RDS(ON) = 1.0 mΩ (typ.) (VGS = 4.5 V)
Low leakage current: IDSS = 10 μA (max) (VDS = 30 V)
Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 1.0 mA)

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