Microchip 2N7008 Type N-Channel MOSFET, 230 mA, 60 V Enhancement, 3-Pin TO-92 2N7008-G
- RS-stocknr.:
- 916-3721
- Fabrikantnummer:
- 2N7008-G
- Fabrikant:
- Microchip
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€ 12,30
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€ 14,875
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 25 - 75 | € 0,492 | € 12,30 |
| 100 + | € 0,446 | € 11,15 |
*prijsindicatie
- RS-stocknr.:
- 916-3721
- Fabrikantnummer:
- 2N7008-G
- Fabrikant:
- Microchip
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Microchip | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 230mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | 2N7008 | |
| Package Type | TO-92 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7.5Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 1W | |
| Forward Voltage Vf | 1.5V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 5.08mm | |
| Width | 4.06 mm | |
| Standards/Approvals | No | |
| Height | 5.33mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Microchip | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 230mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Series 2N7008 | ||
Package Type TO-92 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7.5Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 1W | ||
Forward Voltage Vf 1.5V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 5.08mm | ||
Width 4.06 mm | ||
Standards/Approvals No | ||
Height 5.33mm | ||
Automotive Standard No | ||
2N7008 N-Channel MOSFET Transistors
The Microchip 2N7008 is an enhancement-mode (normally off) transistor that utilises a vertical DMOS structure. The design combines the power handling capabilities of a Bipolar Transistor with the high input impedance and positive temperature coefficient of MOS devices.
Features
Free from Secondary Breakdown
Low-Power Drive Requirement
Ease of Parallel Operation
Low CISS and Fast Switching speeds
Excellent Thermal Stability
Integral Source-Drain diode
High Input Impedance and High Gain
MOSFET Transistors, Microchip
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