Vishay IRFBE30 Type N-Channel Power MOSFET, 4.1 A, 800 V Enhancement, 3-Pin TO-220AB IRFBE30PBF

RS-stocknr.:: 178-0818
Fabrikantnummer:: IRFBE30PBF
Fabrikant:: Vishay

Vishay IRFBE30 Type N-Channel Power MOSFET, 4.1 A, 800 V Enhancement, 3-Pin TO-220AB IRFBE30PBF

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Subtotaal (1 tube van 50 eenheden)*

€ 84,00

(excl. BTW)

€ 101,50

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

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Aantal stuks	Per stuk	Per tube*
50 - 50	€ 1,68	€ 84,00
100 - 200	€ 1,462	€ 73,10
250 +	€ 1,243	€ 62,15

*prijsindicatie

RS-stocknr.:: 178-0818
Fabrikantnummer:: IRFBE30PBF
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	4.1A
	Maximum Drain Source Voltage Vds	800V
	Package Type	TO-220AB
	Series	IRFBE30
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	3Ω
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	78nC
	Forward Voltage Vf	1.8V
	Maximum Power Dissipation Pd	125W
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Length	10.41mm
	Width	4.7mm
	Height	9.01mm
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 4.1A
	Maximum Drain Source Voltage Vds 800V
	Package Type TO-220AB
	Series IRFBE30
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 3Ω
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 78nC
	Forward Voltage Vf 1.8V
	Maximum Power Dissipation Pd 125W
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Length 10.41mm
	Width 4.7mm
	Height 9.01mm
	Automotive Standard No

Datasheet

Vishay IRFBE30 Series Power MOSFET, 800V Drain‑Source Voltage, 4.1A Continuous Drain Current - IRFBE30PBF

This power MOSFET is a high-voltage N-channel transistor designed for switching and amplification tasks in demanding electronic systems. It operates across a broad temperature span and is supplied in a through-hole TO-220AB package with three pins, making it suitable for serviceable power designs where thermal handling and ease of mounting are priorities.

Features and Benefits:

• 800V drain-source rating enables high-voltage switching
• 4.1A continuous drain current supports moderate load currents
• 125W power dissipation allows substantial heat handling
• 3Ω maximum Rds(on) simplifies drive requirements at low switching speeds
• 78nC typical gate charge reduces gate-drive energy demands
• 20V gate-source limit protects gate under normal control voltages

Applications

• Suitable for high-voltage power supplies and converters
• Ideal for switch-mode power in instrumentation
• Used with discrete linear regulators requiring high Vds
• Can be used for industrial motor control at moderate currents
• Suitable for through-hole prototypes and repair work

What temperature extremes can it withstand in operation?

It is specified to operate from -55°C up to 150°C, supporting applications exposed to wide ambient variations.

How is the component mounted and connected on a circuit?

It uses a through-hole TO-220AB package with three pins for straightforward PCB mounting and conventional heatsinking attachment.

What gate-drive considerations should be observed?

Keep the gate-drive amplitude within a 20V maximum to avoid exceeding the gate-source voltage rating and design drive circuitry to supply gate charge around 78nC for effective switching.

What type of conduction mode does it employ?

It is an enhancement-mode N-channel device, requiring a positive gate voltage relative to source to conduct.