Vishay IRFBE30 Type N-Channel Power MOSFET, 4.1 A, 800 V Enhancement, 3-Pin TO-220AB IRFBE30PBF
- RS-stocknr.:
- 541-1124
- Artikelnummer Distrelec:
- 171-15-208
- Fabrikantnummer:
- IRFBE30PBF
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 eenheid)*
€ 2,68
(excl. BTW)
€ 3,24
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- 137 stuk(s) klaar voor verzending
- 128 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 2,68 |
| 10 - 49 | € 2,59 |
| 50 - 99 | € 2,48 |
| 100 - 249 | € 2,34 |
| 250 + | € 2,23 |
*prijsindicatie
- RS-stocknr.:
- 541-1124
- Artikelnummer Distrelec:
- 171-15-208
- Fabrikantnummer:
- IRFBE30PBF
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 4.1A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-220AB | |
| Series | IRFBE30 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.8V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 125W | |
| Typical Gate Charge Qg @ Vgs | 78nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 10.41mm | |
| Height | 9.01mm | |
| Width | 4.7mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 4.1A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-220AB | ||
Series IRFBE30 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.8V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 125W | ||
Typical Gate Charge Qg @ Vgs 78nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 10.41mm | ||
Height 9.01mm | ||
Width 4.7mm | ||
Automotive Standard No | ||
Vishay IRFBE30 Series Power MOSFET, 800V Drain‑Source Voltage, 4.1A Continuous Drain Current - IRFBE30PBF
This power MOSFET is a high-voltage N-channel transistor designed for switching and amplification tasks in demanding electronic systems. It operates across a broad temperature span and is supplied in a through-hole TO-220AB package with three pins, making it suitable for serviceable power designs where thermal handling and ease of mounting are priorities.
Features and Benefits:
• 800V drain-source rating enables high-voltage switching
• 4.1A continuous drain current supports moderate load currents
• 125W power dissipation allows substantial heat handling
• 3Ω maximum Rds(on) simplifies drive requirements at low switching speeds
• 78nC typical gate charge reduces gate-drive energy demands
• 20V gate-source limit protects gate under normal control voltages
• 4.1A continuous drain current supports moderate load currents
• 125W power dissipation allows substantial heat handling
• 3Ω maximum Rds(on) simplifies drive requirements at low switching speeds
• 78nC typical gate charge reduces gate-drive energy demands
• 20V gate-source limit protects gate under normal control voltages
Applications
• Suitable for high-voltage power supplies and converters
• Ideal for switch-mode power in instrumentation
• Used with discrete linear regulators requiring high Vds
• Can be used for industrial motor control at moderate currents
• Suitable for through-hole prototypes and repair work
• Ideal for switch-mode power in instrumentation
• Used with discrete linear regulators requiring high Vds
• Can be used for industrial motor control at moderate currents
• Suitable for through-hole prototypes and repair work
What temperature extremes can it withstand in operation?
It is specified to operate from -55°C up to 150°C, supporting applications exposed to wide ambient variations.
How is the component mounted and connected on a circuit?
It uses a through-hole TO-220AB package with three pins for straightforward PCB mounting and conventional heatsinking attachment.
What gate-drive considerations should be observed?
Keep the gate-drive amplitude within a 20V maximum to avoid exceeding the gate-source voltage rating and design drive circuitry to supply gate charge around 78nC for effective switching.
What type of conduction mode does it employ?
It is an enhancement-mode N-channel device, requiring a positive gate voltage relative to source to conduct.
Gerelateerde Links
- Vishay IRFBE30 Type N-Channel Power MOSFET 800 V Enhancement, 3-Pin TO-220AB IRFBE30PBF
- Vishay SiHU4N80AE Type N-Channel MOSFET 800 V Enhancement, 3-Pin IPAK SIHU4N80AE-GE3
- Vishay EF Type N-Channel Power MOSFET 800 V Enhancement, 3-Pin TO-220AB
- Vishay E Type N-Channel Power MOSFET 800 V Enhancement, 3-Pin TO-220AB SIHP15N80AE-GE3
- Vishay EF Type N-Channel Power MOSFET 800 V Enhancement, 3-Pin TO-220AB SIHP11N80AEF-GE3
- Infineon HEXFETPower MOSFET Type N-Channel MOSFET 24 V Enhancement, 3-Pin TO-220AB IRF1324PBF
- Infineon Single HEXFET 1 Type N-Channel MOSFET Enhancement, 3-Pin TO-220AB AUIRL3705Z
- ROHM Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220AB