Vishay IRFBE30 Type N-Channel Power MOSFET, 4.1 A, 800 V Enhancement, 3-Pin TO-220AB IRFBE30PBF

RS-stocknr.:: 541-1124
Artikelnummer Distrelec:: 171-15-208
Fabrikantnummer:: IRFBE30PBF
Fabrikant:: Vishay

Vishay IRFBE30 Type N-Channel Power MOSFET, 4.1 A, 800 V Enhancement, 3-Pin TO-220AB IRFBE30PBF

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RS-stocknr.:: 541-1124
Artikelnummer Distrelec:: 171-15-208
Fabrikantnummer:: IRFBE30PBF
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	4.1A
	Maximum Drain Source Voltage Vds	800V
	Series	IRFBE30
	Package Type	TO-220AB
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	3Ω
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	125W
	Typical Gate Charge Qg @ Vgs	78nC
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	1.8V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Width	4.7mm
	Height	9.01mm
	Length	10.41mm
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 4.1A
	Maximum Drain Source Voltage Vds 800V
	Series IRFBE30
	Package Type TO-220AB
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 3Ω
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 125W
	Typical Gate Charge Qg @ Vgs 78nC
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf 1.8V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Width 4.7mm
	Height 9.01mm
	Length 10.41mm
	Automotive Standard No

Vishay IRFBE30 Series Power MOSFET, 800V Drain Source Voltage, 4.1A Continuous Drain Current - IRFBE30PBF

This power MOSFET is a through‑hole N‑channel transistor designed for switching and power control in industrial electronics. It operates as an enhancement‑mode device suitable for high‑voltage applications, offering a combination of voltage handling and gate‑drive capability for demanding electrical systems.

Features and Benefits:

• 800V drain‑source voltage enables high‑voltage switching applications • 4.1A continuous drain current supports moderate load currents • 3 Ω maximum Rds reduces current loss during conduction • 78 nC typical gate charge allows predictable switching behaviour • 125W power dissipation manages thermal stress in power circuits • -55 °C to 150 °C operating range endures wide temperature extremes

Applications

• Suitable for high‑voltage power supplies and converters • Ideal for industrial motor drive switching stages • Used for solid‑state relay and protection circuitry • Can be used for load switching in automation panels

What gate voltage limits should I observe during design?

Gate drive must remain within ±20V maximum relative to source to prevent gate‑oxide stress.

How should thermal management be approached on a PCB?

Use a heatsink on the TO‑220AB package or a thermally conductive mounting solution to dissipate up to 125W of power under rated conditions.

What switching characteristics affect EMI in my design?

The typical gate charge of 78 nC at the specified gate drive influences rise and fall times, impacting switching transitions and electromagnetic emissions.

Is this device suitable for surface‑mounting techniques?

It is supplied in a TO‑220AB through‑hole package intended for mechanical mounting and conventional through‑hole assembly.