Vishay IRF840A Type N-Channel Power MOSFET, 8 A, 500 V Enhancement, 3-Pin TO-220AB IRF840APBF

RS-stocknr.:: 178-0835
Fabrikantnummer:: IRF840APBF
Fabrikant:: Vishay

Vishay IRF840A Type N-Channel Power MOSFET, 8 A, 500 V Enhancement, 3-Pin TO-220AB IRF840APBF

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Subtotaal (1 tube van 50 eenheden)*

€ 79,20

(excl. BTW)

€ 95,85

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

Op voorraad

50 stuk(s) klaar voor verzending vanaf een andere locatie
Plus verzending 2.950 stuk(s) vanaf 13 augustus 2026
Plus verzending 200 stuk(s) vanaf 14 augustus 2026

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Aantal stuks	Per stuk	Per tube*
50 - 50	€ 1,584	€ 79,20
100 - 200	€ 1,346	€ 67,30
250 +	€ 1,267	€ 63,35

*prijsindicatie

RS-stocknr.:: 178-0835
Fabrikantnummer:: IRF840APBF
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	8A
	Maximum Drain Source Voltage Vds	500V
	Package Type	TO-220AB
	Series	IRF840A
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	850mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	2V
	Typical Gate Charge Qg @ Vgs	38nC
	Maximum Gate Source Voltage Vgs	30V
	Maximum Power Dissipation Pd	125W
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Length	10.41mm
	Height	9.01mm
	Width	4.7mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 8A
	Maximum Drain Source Voltage Vds 500V
	Package Type TO-220AB
	Series IRF840A
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 850mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 2V
	Typical Gate Charge Qg @ Vgs 38nC
	Maximum Gate Source Voltage Vgs 30V
	Maximum Power Dissipation Pd 125W
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Length 10.41mm
	Height 9.01mm
	Width 4.7mm
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet

Vishay IRF840A Series Power MOSFET, 500V Drain Source Voltage, 125W Power Dissipation - IRF840APBF

This power MOSFET is a high-voltage N-channel enhancement device intended for switching and power-control roles in industrial electronics. It operates across a broad ambient range and is supplied in a TO-220AB through-hole package for straightforward mounting in power assemblies. The device is suitable where durable thermal margins and standard gate-drive levels are used.

Features and Benefits:

• 500V drain rating enables high-voltage switching applications
• 8A continuous drain current supports moderate load currents
• 125W power dissipation allows substantial power handling
• 850mΩ Rds(on) reduces conduction losses at low gate drive
• 38nC typical gate charge minimises switching energy
• 30V gate-source limit provides robust gate-voltage tolerance

Applications

• Suitable for industrial high-voltage converters and inverters
• Ideal for switch-mode power supply primary switching
• Used with discrete motor-control stages requiring 8A switching
• Can be used for power-management in lab test equipment
• Suitable for replacement in compatible TO-220AB assemblies

What thermal extremes can it tolerate during operation?

The device is rated to operate from -55°C up to 150°C junction temperature, supporting use in demanding temperature environments.

What mounting and board-assembly approach is recommended?

The TO-220AB package is designed for through-hole mounting and allows direct fastening to heatsinks for improved thermal dissipation.

How does the gate-charge value affect switching design?

A 38nC gate charge determines the drive current and driver selection to achieve desired switching speeds and limits driven switching losses.

What gate-voltage constraints should be observed to avoid damage?

Gate-source voltage must not exceed 30V to prevent gate-oxide stress and ensure long-term reliability.