Vishay IRF820 Type N-Channel Power MOSFET, 2.5 A, 500 V Enhancement, 3-Pin TO-220AB
- RS-stocknr.:
- 543-0002
- Artikelnummer Distrelec:
- 301-91-570
- Fabrikantnummer:
- IRF820PBF
- Fabrikant:
- Vishay
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*prijsindicatie
- RS-stocknr.:
- 543-0002
- Artikelnummer Distrelec:
- 301-91-570
- Fabrikantnummer:
- IRF820PBF
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 2.5A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | TO-220AB | |
| Series | IRF820 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 50W | |
| Typical Gate Charge Qg @ Vgs | 24nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.6V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.7mm | |
| Standards/Approvals | RoHS | |
| Height | 9.01mm | |
| Length | 10.41mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 2.5A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type TO-220AB | ||
Series IRF820 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 50W | ||
Typical Gate Charge Qg @ Vgs 24nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.6V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Width 4.7mm | ||
Standards/Approvals RoHS | ||
Height 9.01mm | ||
Length 10.41mm | ||
Automotive Standard No | ||
Vishay IRF820 Series Power MOSFET, 500V Drain Source Voltage, 2.5A Continuous Drain Current - IRF820PBF
This power MOSFET is a high-voltage N-channel enhancement device designed for switching and amplification tasks in industrial electronics. It suits applications requiring elevated drain-source voltages and moderate continuous current, operating across a wide temperature span and mounted in a standard through-hole package for straightforward board assembly.
Features and Benefits:
• 500V drain-source rating enables high-voltage switching
• 2.5A continuous current supports moderate load handling
• 50W power dissipation allows sustained thermal performance
• 3 Ω on-resistance reduces conduction-related losses
• 24 nC typical gate charge yields predictable drive requirements
• Vgs ±20V tolerance protects gate from overvoltage events
• 2.5A continuous current supports moderate load handling
• 50W power dissipation allows sustained thermal performance
• 3 Ω on-resistance reduces conduction-related losses
• 24 nC typical gate charge yields predictable drive requirements
• Vgs ±20V tolerance protects gate from overvoltage events
Applications
• Suitable for SMPS primary-side switching in industrial supplies
• Ideal for linear amplifier stages requiring high-voltage transistors
• Used for motor-drive Interface circuits with moderate currents
• Can be used for high-voltage test rigs and laboratory power supplies
• Suitable for retrofit through-hole designs in control panels
• Ideal for linear amplifier stages requiring high-voltage transistors
• Used for motor-drive Interface circuits with moderate currents
• Can be used for high-voltage test rigs and laboratory power supplies
• Suitable for retrofit through-hole designs in control panels
What mounting approach does this device require?
It is supplied for through-hole assembly in a TO-220AB package, allowing conventional soldering and heatsinking options.
What thermal range can it tolerate during operation?
It can operate between -55 °C and 150 °C, permitting use in harsh ambient and elevated-junction scenarios.
How does gate drive impact switching behaviour?
The typical gate charge of 24 nC at rated gate voltage determines required driver current and switching-speed trade-offs.
What must be considered for power dissipation management?
With a 50W maximum dissipation, external heatsinking and mounting orientation are necessary to maintain safe junction temperatures at higher loads.
Are there specific electrical limits to observe at the gate?
The gate-source voltage must not exceed ±20V to avoid damaging the gate oxide and compromising device integrity.
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