Vishay IRF830A Type N-Channel Power MOSFET, 5 A, 500 V Enhancement, 3-Pin TO-220AB

RS-stocknr.:: 542-9434
Artikelnummer Distrelec:: 171-16-197
Fabrikantnummer:: IRF830APBF
Fabrikant:: Vishay

Vishay IRF830A Type N-Channel Power MOSFET, 5 A, 500 V Enhancement, 3-Pin TO-220AB

Bulkkorting beschikbaar

Bekijk bulkkorting

Subtotaal (1 eenheid)*

€ 3,00

(excl. BTW)

€ 3,63

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

Op voorraad

Plus verzending 24 stuk(s) vanaf 23 juni 2026
Plus verzending 409 stuk(s) vanaf 23 juni 2026
Plus verzending 615 stuk(s) vanaf 30 juni 2026

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk
1 - 9	€ 3,00
10 - 49	€ 2,70
50 +	€ 2,44

*prijsindicatie

RS-stocknr.:: 542-9434
Artikelnummer Distrelec:: 171-16-197
Fabrikantnummer:: IRF830APBF
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	5A
	Maximum Drain Source Voltage Vds	500V
	Package Type	TO-220AB
	Series	IRF830A
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	1.4Ω
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	74W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	24nC
	Maximum Gate Source Voltage Vgs	30V
	Forward Voltage Vf	1.5V
	Maximum Operating Temperature	150°C
	Width	4.7mm
	Height	9.01mm
	Length	10.41mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 5A
	Maximum Drain Source Voltage Vds 500V
	Package Type TO-220AB
	Series IRF830A
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 1.4Ω
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 74W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 24nC
	Maximum Gate Source Voltage Vgs 30V
	Forward Voltage Vf 1.5V
	Maximum Operating Temperature 150°C
	Width 4.7mm
	Height 9.01mm
	Length 10.41mm
	Standards/Approvals RoHS
	Automotive Standard No

Vishay IRF830A Series Power MOSFET, 500V Maximum Drain Source Voltage, 5A Maximum Continuous Drain Current - IRF830APBF

This power MOSFET is a through-hole N-channel enhancement device designed for high-voltage switching in industrial electronics. It is intended for applications where robust drain-to-source voltage handling and moderate current capacity are required, providing a Compact solution for power switching on heatsinked assemblies.

Features and Benefits:

• 500V Vds enables high-voltage switching in industrial circuits • 5A continuous drain current supports steady load operation • 1.4Ω Rds(on) minimises conduction losses under load • 74W maximum power dissipation for effective thermal handling • 24nC typical gate charge allows predictable switching behaviour • Vgs ±30V rating protects gate under control-signal excursions

Applications

• Suitable for high-voltage motor drive front-ends • Ideal for switch-mode power supplies in industrial equipment • Used for power conversion modules requiring through-hole mounting • Can be used for relay-replacement switching in control panels

What mounting method is required for reliable heat removal?

The device is supplied in a TO-220AB package for through-hole installation and benefits from a heatsink attached to the tab to achieve rated power dissipation.

How does the gate charge affect switching performance?

A typical gate charge of 24nC at rated conditions determines required driver strength and influences switching losses and rise/fall times in high-speed applications.

What temperature range can it operate within?

The component is rated to function from -55°C up to 150°C, allowing use across harsh industrial thermal environments.

What protection should be considered for gate and drain overstress?

Designers should include gate protection to remain within ±30V and implement snubbing or clamp networks to limit transients on the drain at high voltages.