Vishay IRF710 Type N-Channel Power MOSFET, 1.2 A, 400 V Enhancement, 3-Pin TO-220AB IRF710PBF

RS-stocknr.:: 178-0855
Fabrikantnummer:: IRF710PBF
Fabrikant:: Vishay

Vishay IRF710 Type N-Channel Power MOSFET, 1.2 A, 400 V Enhancement, 3-Pin TO-220AB IRF710PBF

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Subtotaal (1 tube van 50 eenheden)*

€ 41,90

(excl. BTW)

€ 50,70

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

Op voorraad

Plus verzending 1.200 stuk(s) vanaf 16 juli 2026

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Aantal stuks	Per stuk	Per tube*
50 - 50	€ 0,838	€ 41,90
100 - 200	€ 0,712	€ 35,60
250 +	€ 0,628	€ 31,40

*prijsindicatie

RS-stocknr.:: 178-0855
Fabrikantnummer:: IRF710PBF
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	1.2A
	Maximum Drain Source Voltage Vds	400V
	Package Type	TO-220AB
	Series	IRF710
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	3.6Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	17nC
	Forward Voltage Vf	1.6V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	36W
	Maximum Gate Source Voltage Vgs	20V
	Maximum Operating Temperature	150°C
	Width	4.7mm
	Height	9.01mm
	Standards/Approvals	RoHS
	Length	10.41mm
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 1.2A
	Maximum Drain Source Voltage Vds 400V
	Package Type TO-220AB
	Series IRF710
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 3.6Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 17nC
	Forward Voltage Vf 1.6V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 36W
	Maximum Gate Source Voltage Vgs 20V
	Maximum Operating Temperature 150°C
	Width 4.7mm
	Height 9.01mm
	Standards/Approvals RoHS
	Length 10.41mm
	Automotive Standard No

Datasheet

Vishay IRF710 Series Power MOSFET, 400V Maximum Drain Source Voltage, 1.2A Maximum Continuous Drain Current - IRF710PBF

This power MOSFET is a high-voltage N-channel enhancement device designed for switching and power-management roles in industrial and electronic systems. It operates over a wide temperature span and is packaged for through-hole mounting, offering a compact, serviceable option for boards and assemblies that require discrete transistor switching at elevated voltages.

Features and Benefits:

• 400V drain-source rating enables high-voltage switching applications • 3.6Ω Rds(on) reduces conduction losses in low-current circuits • 1.2A continuous drain current supports modest load currents • 17nC typical gate charge allows predictable switching control • 36W power dissipation handles intermittent thermal loading • 20V gate-source limit permits common gate-drive voltages

Applications

• Suitable for industrial relay and contactor driver stages • Ideal for high-voltage laboratory power supplies • Used for mains-side snubber and bleed resistor switching • Can be used for motor control in low-current ancillary circuits

What mounting style does it use and why is that useful?

It is a through-hole device in a TO-220AB package which simplifies heat-sinking and replacement on serviceable assemblies.

What ambient temperature range can it tolerate during operation?

The device is specified for operation from -55°C up to 150°C, allowing use in environments with wide thermal variation.

How does gate charge affect driver selection?

With a typical gate charge of 17nC, drivers must supply sufficient Peak current for desired switching speeds while managing gate-drive energy.

What is the maximum safe gate voltage to apply?

The maximum gate-source voltage is 20V, so gate-drive circuits should limit control voltages accordingly to avoid damage.