onsemi NDS352AP Type P-Channel MOSFET, 900 mA, 30 V Enhancement, 3-Pin SOT-23 NDS352AP

RS-stocknr.:: 671-1084
Fabrikantnummer:: NDS352AP
Fabrikant:: onsemi

onsemi NDS352AP Type P-Channel MOSFET, 900 mA, 30 V Enhancement, 3-Pin SOT-23 NDS352AP

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Subtotaal (1 verpakking van 10 eenheden)*

€ 2,82

(excl. BTW)

€ 3,41

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 75,00

Op voorraad

Plus verzending 40 stuk(s) vanaf 29 december 2025
Plus verzending 3.560 stuk(s) vanaf 05 januari 2026

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Aantal stuks	Per stuk	Per verpakking*
10 - 90	€ 0,282	€ 2,82
100 - 240	€ 0,244	€ 2,44
250 - 490	€ 0,211	€ 2,11
500 - 990	€ 0,184	€ 1,84
1000 +	€ 0,168	€ 1,68

*prijsindicatie

RS-stocknr.:: 671-1084
Fabrikantnummer:: NDS352AP
Fabrikant:: onsemi

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	onsemi
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	900mA
	Maximum Drain Source Voltage Vds	30V
	Series	NDS352AP
	Package Type	SOT-23
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	500mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	500mW
	Forward Voltage Vf	-1.2V
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	2nC
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	2.92mm
	Height	0.94mm
	Width	1.4 mm
	Automotive Standard	No

	Alles selecteren
	Merk onsemi
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 900mA
	Maximum Drain Source Voltage Vds 30V
	Series NDS352AP
	Package Type SOT-23
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 500mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 500mW
	Forward Voltage Vf -1.2V
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 2nC
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 2.92mm
	Height 0.94mm
	Width 1.4 mm
	Automotive Standard No

Enhancement Mode P-Channel MOSFET, ON Semiconductor

ON Semiconductors range of P-Channel MOSFETS are produced using ON Semi’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.

Features and Benefits:

• Voltage controlled P-Channel small signal switch

• High-Density cell design

• High saturation current

• Superior switching

• Great rugged and reliable performance

• DMOS technology

Applications:

• Load Switching

• DC/DC converter

• Battery protection

• Power management control

• DC motor control

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.