Vishay Dual TrenchFET 2 Type N, Type P-Channel MOSFET, 3.9 A, 20 V Enhancement, 6-Pin TSOP

RS-stocknr.:: 180-7282
Fabrikantnummer:: SI3585CDV-T1-GE3
Fabrikant:: Vishay

Vishay Dual TrenchFET 2 Type N, Type P-Channel MOSFET, 3.9 A, 20 V Enhancement, 6-Pin TSOP

Subtotaal (1 rol van 3000 eenheden)*

€ 582,00

(excl. BTW)

€ 705,00

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 75,00

Tijdelijk niet op voorraad

Verzending vanaf 13 april 2026

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Aantal stuks	Per stuk	Per rol*
3000 +	€ 0,194	€ 582,00

*prijsindicatie

RS-stocknr.:: 180-7282
Fabrikantnummer:: SI3585CDV-T1-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Product Type	MOSFET
	Channel Type	Type N, Type P
	Maximum Continuous Drain Current Id	3.9A
	Maximum Drain Source Voltage Vds	20V
	Series	TrenchFET
	Package Type	TSOP
	Mount Type	Surface
	Pin Count	6
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	3.2nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	12 V
	Maximum Power Dissipation Pd	1.4W
	Transistor Configuration	Dual
	Maximum Operating Temperature	150°C
	Length	3.05mm
	Standards/Approvals	No
	Height	1mm
	Width	1.65 mm
	Number of Elements per Chip	2
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Product Type MOSFET
	Channel Type Type N, Type P
	Maximum Continuous Drain Current Id 3.9A
	Maximum Drain Source Voltage Vds 20V
	Series TrenchFET
	Package Type TSOP
	Mount Type Surface
	Pin Count 6
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 3.2nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 12 V
	Maximum Power Dissipation Pd 1.4W
	Transistor Configuration Dual
	Maximum Operating Temperature 150°C
	Length 3.05mm
	Standards/Approvals No
	Height 1mm
	Width 1.65 mm
	Number of Elements per Chip 2
	Automotive Standard No

Datasheet

Land van herkomst:: CN

Vishay MOSFET

The Vishay surface mount dual channel (both P and N-channels) MOSFET is a new age product with a drain-source voltage of 20V. The MOSFET has a drain-source resistance of 58mohm at a gate-source voltage of 4.5V. It has continuous drain currents of 3.9A and 2.1A. It has a maximum power rating of 1.4W and 1.3W. It has been optimized, for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Applications

• DC/DC converters

• Drivers: motor, solenoid, relay

• Load switch for portable devices

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• Rg tested