Vishay Dual SI7956DP Type N-Channel MOSFET, 4.1 A, 150 V Enhancement, 8-Pin PowerPack

RS-stocknr.:: 180-7324
Fabrikantnummer:: SI7956DP-T1-GE3
Fabrikant:: Vishay

Vishay Dual SI7956DP Type N-Channel MOSFET, 4.1 A, 150 V Enhancement, 8-Pin PowerPack

Subtotaal (1 rol van 3000 eenheden)*

€ 4.449,00

(excl. BTW)

€ 5.382,00

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 75,00

Op voorraad

3.000 stuk(s) klaar voor verzending vanaf een andere locatie

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per rol*
3000 +	€ 1,483	€ 4.449,00

*prijsindicatie

RS-stocknr.:: 180-7324
Fabrikantnummer:: SI7956DP-T1-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	4.1A
	Maximum Drain Source Voltage Vds	150V
	Series	SI7956DP
	Package Type	PowerPack
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.1Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-50°C
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	3.5W
	Typical Gate Charge Qg @ Vgs	17nC
	Transistor Configuration	Dual
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Height	1.12mm
	Width	5.26 mm
	Length	6.25mm
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 4.1A
	Maximum Drain Source Voltage Vds 150V
	Series SI7956DP
	Package Type PowerPack
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.1Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -50°C
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 3.5W
	Typical Gate Charge Qg @ Vgs 17nC
	Transistor Configuration Dual
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Height 1.12mm
	Width 5.26 mm
	Length 6.25mm
	Automotive Standard No

Datasheet

Land van herkomst:: CN

Vishay MOSFET

The Vishay surface mount N-channel PowerPAK-SO-8 MOSFET is a new age product with a drain-source voltage of 150V and a maximum gate-source voltage of 20V. It has a drain-source resistance of 105mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 3.5W and continuous drain current of 4.1A. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Dual MOSFET for space savings

• Halogen free

• Lead (Pb) free component

• Low on-resistance in new low thermal resistance PowerPAK package

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Applications

• Half bridge and forward converters

• High efficiency primary side switches

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• IEC 61249-2-21

• Rg tested