Vishay Dual TrenchFET 2 Type P, Type N-Channel MOSFET, 4 A, 100 V Enhancement, 8-Pin PowerPAK 1212-8 Dual
- RS-stocknr.:
- 228-2925
- Fabrikantnummer:
- SiS590DN-T1-GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 10 eenheden)*
€ 10,09
(excl. BTW)
€ 12,21
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Laatste voorraad RS
- Laatste 5.920 stuk(s), klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 90 | € 1,009 | € 10,09 |
| 100 - 240 | € 0,949 | € 9,49 |
| 250 - 490 | € 0,858 | € 8,58 |
| 500 - 990 | € 0,808 | € 8,08 |
| 1000 + | € 0,757 | € 7,57 |
*prijsindicatie
- RS-stocknr.:
- 228-2925
- Fabrikantnummer:
- SiS590DN-T1-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type P, Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PowerPAK 1212-8 Dual | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.251Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 23.1W | |
| Typical Gate Charge Qg @ Vgs | 4.5nC | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Dual | |
| Standards/Approvals | RoHS | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type P, Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PowerPAK 1212-8 Dual | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.251Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 23.1W | ||
Typical Gate Charge Qg @ Vgs 4.5nC | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Dual | ||
Standards/Approvals RoHS | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The Vishay Combo N- & P-Channel -100 V MOSFET.
100 % Rg and UIS tested
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