Vishay TrenchFET Type N-Channel MOSFET, 2.3 A, 60 V Enhancement, 3-Pin SOT-23

RS-stocknr.:: 180-7396
Fabrikantnummer:: SQ2308CES-T1_GE3
Fabrikant:: Vishay

Vishay TrenchFET Type N-Channel MOSFET, 2.3 A, 60 V Enhancement, 3-Pin SOT-23

Subtotaal (1 rol van 3000 eenheden)*

€ 624,00

(excl. BTW)

€ 756,00

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 75,00

Laatste voorraad RS

Laatste 24.000 stuk(s), klaar voor verzending vanaf een andere locatie

Aantal stuks	Per stuk	Per rol*
3000 +	€ 0,208	€ 624,00

*prijsindicatie

RS-stocknr.:: 180-7396
Fabrikantnummer:: SQ2308CES-T1_GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	2.3A
	Maximum Drain Source Voltage Vds	60V
	Package Type	SOT-23
	Series	TrenchFET
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	164mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	3.5nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	2W
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Length	3.04mm
	Height	1.12mm
	Width	2.64 mm
	Automotive Standard	AEC-Q101

	Alles selecteren
	Merk Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 2.3A
	Maximum Drain Source Voltage Vds 60V
	Package Type SOT-23
	Series TrenchFET
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 164mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 3.5nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 2W
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Length 3.04mm
	Height 1.12mm
	Width 2.64 mm
	Automotive Standard AEC-Q101

Datasheet

Land van herkomst:: CN

Vishay MOSFET

The Vishay surface mount N-channel MOSFET is a new age product with a drain-source voltage of 60V and a maximum gate-source voltage of 20V. It has drain-source resistance of 150mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 2W and continuous drain current of 2.3A. The minimum and a maximum driving voltage for this transistor are 4.5V and 10V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 175°C

• TrenchFET power MOSFET

• Typical ESD performance 1500V

Applications

• Adaptor switch

• DC/DC converter

• Load switch

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• IEC 61249-2-21

• Rg tested

• UIS tested