Vishay TrenchFET Type N-Channel MOSFET, 2.3 A, 60 V Enhancement, 3-Pin SOT-23 SQ2308CES-T1_GE3
- RS-stocknr.:
- 180-7943
- Fabrikantnummer:
- SQ2308CES-T1_GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 20 eenheden)*
€ 8,06
(excl. BTW)
€ 9,76
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
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- Verzending 23.180 stuk(s) vanaf 11 mei 2026
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 20 - 180 | € 0,403 | € 8,06 |
| 200 - 480 | € 0,322 | € 6,44 |
| 500 - 980 | € 0,282 | € 5,64 |
| 1000 - 1980 | € 0,238 | € 4,76 |
| 2000 + | € 0,217 | € 4,34 |
*prijsindicatie
- RS-stocknr.:
- 180-7943
- Fabrikantnummer:
- SQ2308CES-T1_GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2.3A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-23 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 164mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 3.5nC | |
| Maximum Power Dissipation Pd | 2W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 3.04mm | |
| Height | 1.12mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2.3A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-23 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 164mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 3.5nC | ||
Maximum Power Dissipation Pd 2W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 3.04mm | ||
Height 1.12mm | ||
Automotive Standard AEC-Q101 | ||
- Land van herkomst:
- CN
Vishay MOSFET
The Vishay surface mount N-channel MOSFET is a new age product with a drain-source voltage of 60V and a maximum gate-source voltage of 20V. It has drain-source resistance of 150mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 2W and continuous drain current of 2.3A. The minimum and a maximum driving voltage for this transistor are 4.5V and 10V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 175°C
• TrenchFET power MOSFET
• Typical ESD performance 1500V
Applications
• Adaptor switch
• DC/DC converter
• Load switch
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• IEC 61249-2-21
• Rg tested
• UIS tested
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