Vishay TrenchFET Type N-Channel MOSFET, 2.3 A, 60 V Enhancement, 3-Pin SOT-23 SQ2308CES-T1_GE3

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Verpakkingsopties
RS-stocknr.:
180-7943
Fabrikantnummer:
SQ2308CES-T1_GE3
Fabrikant:
Vishay
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Merk

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

2.3A

Maximum Drain Source Voltage Vds

60V

Package Type

SOT-23

Series

TrenchFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

164mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

3.5nC

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

2W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Height

1.12mm

Standards/Approvals

No

Length

3.04mm

Width

2.64 mm

Automotive Standard

AEC-Q101

Land van herkomst:
CN

Vishay MOSFET


The Vishay surface mount N-channel MOSFET is a new age product with a drain-source voltage of 60V and a maximum gate-source voltage of 20V. It has drain-source resistance of 150mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 2W and continuous drain current of 2.3A. The minimum and a maximum driving voltage for this transistor are 4.5V and 10V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 175°C

• TrenchFET power MOSFET

• Typical ESD performance 1500V

Applications


• Adaptor switch

• DC/DC converter

• Load switch

Certifications


• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• IEC 61249-2-21

• Rg tested

• UIS tested

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