Vishay TrenchFET Type P-Channel TrenchFET Power MOSFET, 1.7 A, 60 V Enhancement, 3-Pin SOT-23
- RS-stocknr.:
- 180-7397
- Fabrikantnummer:
- SQ2309ES-T1_GE3
- Fabrikant:
- Vishay
Momenteel niet beschikbaar
We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.
- RS-stocknr.:
- 180-7397
- Fabrikantnummer:
- SQ2309ES-T1_GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | TrenchFET Power MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 1.7A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | TrenchFET | |
| Package Type | TO-236 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.335Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 8.5nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC-Q101, IEC 61249-2-21, RoHS (2002/95/EC) | |
| Length | 3.04mm | |
| Height | 1.12mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type TrenchFET Power MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 1.7A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series TrenchFET | ||
Package Type TO-236 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.335Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 8.5nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC-Q101, IEC 61249-2-21, RoHS (2002/95/EC) | ||
Length 3.04mm | ||
Height 1.12mm | ||
Automotive Standard AEC-Q101 | ||
- Land van herkomst:
- CN
Vishay MOSFET
The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 60V and a maximum gate-source voltage of 20V. It has drain-source resistance of 15.5mohm at a gate-source voltage of 10V. It has continuous drain current of 50A and maximum power dissipation of 136W. The minimum and a maximum driving voltage for this transistor are 4.5V and 10V respectively. It is used in automotive applications. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 175°C
• Package with low thermal resistance
• TrenchFET power MOSFET
Applications
• Adaptor switch
• Load switches
Certifications
• AEC-Q101
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• Rg tested
• UIS tested
Gerelateerde Links
- Vishay TrenchFET Type P-Channel TrenchFET Power MOSFET 60 V Enhancement, 3-Pin SOT-23 SQ2309ES-T1_GE3
- Vishay TrenchFET P-Channel MOSFET -150 V Enhancement, 3-Pin SOT-23 SQ2325CES-T1_GE3
- Vishay TrenchFET P-Channel MOSFET -30 V Enhancement, 3-Pin SOT-23 SQ2303CES-T1_GE3
- Vishay TrenchFET Type P-Channel MOSFET 80 V Enhancement, 3-Pin SOT-23
- Vishay TrenchFET Type P-Channel MOSFET 40 V Enhancement, 3-Pin SOT-23
- Vishay TrenchFET Type P-Channel MOSFET 40 V Enhancement, 3-Pin SOT-23 SQ2389ES-T1_GE3
- Vishay TrenchFET Type P-Channel MOSFET 80 V Enhancement, 3-Pin SOT-23 SQ2337ES-T1_GE3
- Vishay SQ Type P-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23