Vishay TrenchFET Type P-Channel MOSFET, 4.1 A, 40 V Enhancement, 3-Pin SOT-23 SQ2389ES-T1_GE3

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RS-stocknr.:
180-8138
Fabrikantnummer:
SQ2389ES-T1_GE3
Fabrikant:
Vishay
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Merk

Vishay

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

4.1A

Maximum Drain Source Voltage Vds

40V

Package Type

SOT-23

Series

TrenchFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

188mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

8.2nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

-1.2V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

3W

Maximum Operating Temperature

175°C

Length

3.04mm

Standards/Approvals

No

Height

1.12mm

Width

2.64 mm

Automotive Standard

AEC-Q101

Land van herkomst:
CN

Vishay MOSFET


The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 40V and a maximum gate-source voltage of 20V. It has drain-source resistance of 94mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 3W and continuous drain current of 4.1A. The minimum and a maximum driving voltage for this MOSFET is 4.5V and 10V respectively. It is used in automotive applications. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 175°C

• TrenchFET power MOSFET

Certifications


• AEC-Q101

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• Rg tested

• UIS tested

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