Vishay TrenchFET Type P-Channel TrenchFET Power MOSFET, 1.7 A, 60 V Enhancement, 3-Pin SOT-23 SQ2309ES-T1_GE3

RS-stocknr.:: 180-7990
Fabrikantnummer:: SQ2309ES-T1_GE3
Fabrikant:: Vishay

Vishay TrenchFET Type P-Channel TrenchFET Power MOSFET, 1.7 A, 60 V Enhancement, 3-Pin SOT-23 SQ2309ES-T1_GE3

Bulkkorting beschikbaar

Subtotaal (1 verpakking van 20 eenheden)*

€ 10,42

(excl. BTW)

€ 12,60

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 75,00

Laatste voorraad RS

Laatste 380 stuk(s), klaar voor verzending vanaf een andere locatie

Aantal stuks	Per stuk	Per verpakking*
20 - 180	€ 0,521	€ 10,42
200 - 480	€ 0,417	€ 8,34
500 - 980	€ 0,313	€ 6,26
1000 - 1980	€ 0,261	€ 5,22
2000 +	€ 0,235	€ 4,70

*prijsindicatie

RS-stocknr.:: 180-7990
Fabrikantnummer:: SQ2309ES-T1_GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Channel Type	Type P
	Product Type	TrenchFET Power MOSFET
	Maximum Continuous Drain Current Id	1.7A
	Maximum Drain Source Voltage Vds	60V
	Package Type	TO-236
	Series	TrenchFET
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.335Ω
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	8.5nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	2W
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	175°C
	Height	1.12mm
	Length	3.04mm
	Standards/Approvals	AEC-Q101, IEC 61249-2-21, RoHS (2002/95/EC)
	Width	2.64 mm
	Automotive Standard	AEC-Q101

	Alles selecteren
	Merk Vishay
	Channel Type Type P
	Product Type TrenchFET Power MOSFET
	Maximum Continuous Drain Current Id 1.7A
	Maximum Drain Source Voltage Vds 60V
	Package Type TO-236
	Series TrenchFET
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.335Ω
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 8.5nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 2W
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 175°C
	Height 1.12mm
	Length 3.04mm
	Standards/Approvals AEC-Q101, IEC 61249-2-21, RoHS (2002/95/EC)
	Width 2.64 mm
	Automotive Standard AEC-Q101

Datasheet

Land van herkomst:: CN

Vishay MOSFET

The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 60V and a maximum gate-source voltage of 20V. It has drain-source resistance of 15.5mohm at a gate-source voltage of 10V. It has continuous drain current of 50A and maximum power dissipation of 136W. The minimum and a maximum driving voltage for this transistor are 4.5V and 10V respectively. It is used in automotive applications. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 175°C

• Package with low thermal resistance

• TrenchFET power MOSFET

Applications

• Adaptor switch

• Load switches

Certifications

• AEC-Q101

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• Rg tested

• UIS tested