Vishay TrenchFET Type P-Channel MOSFET, 2.2 A, 80 V Enhancement, 3-Pin SOT-23

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RS-stocknr.:
180-7399
Fabrikantnummer:
SQ2337ES-T1_GE3
Fabrikant:
Vishay
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Merk

Vishay

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

2.2A

Maximum Drain Source Voltage Vds

80V

Series

TrenchFET

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

314mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

11.5nC

Maximum Power Dissipation Pd

3W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

-1.2V

Maximum Operating Temperature

175°C

Length

3.04mm

Standards/Approvals

No

Width

2.64 mm

Height

1.12mm

Automotive Standard

AEC-Q101

Land van herkomst:
CN

Vishay MOSFET


The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 80V and a maximum gate-source voltage of 20V. It has drain-source resistance of 290mohm at a gate-source voltage of 4.5V. It has a maximum power dissipation of 3W and continuous drain current of 2.2A. The minimum and a maximum driving voltage for this MOSFET is 6V and 10V respectively. It is used in automotive applications. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 175°C

• TrenchFET power MOSFET

Certifications


• AEC-Q101

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• Rg tested

• UIS tested

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