Vishay EF Type N-Channel Power MOSFET, 34 A, 650 V Enhancement, 3-Pin TO-247AC SIHG085N60EF-GE3

RS-stocknr.:: 268-8297
Fabrikantnummer:: SIHG085N60EF-GE3
Fabrikant:: Vishay

Vishay EF Type N-Channel Power MOSFET, 34 A, 650 V Enhancement, 3-Pin TO-247AC SIHG085N60EF-GE3

Bulkkorting beschikbaar

Bekijk bulkkorting

Subtotaal (1 eenheid)*

€ 8,22

(excl. BTW)

€ 9,95

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

Op voorraad

499 stuk(s) klaar voor verzending vanaf een andere locatie

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk
1 - 4	€ 8,22
5 - 9	€ 8,05
10 - 99	€ 7,40
100 - 499	€ 6,06
500 +	€ 5,17

*prijsindicatie

RS-stocknr.:: 268-8297
Fabrikantnummer:: SIHG085N60EF-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	34A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-247AC
	Series	EF
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.084Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	63nC
	Maximum Power Dissipation Pd	184W
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	30V
	Maximum Operating Temperature	150°C
	Length	15.7mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 34A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-247AC
	Series EF
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.084Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 63nC
	Maximum Power Dissipation Pd 184W
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 30V
	Maximum Operating Temperature 150°C
	Length 15.7mm
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - SIHG085N60EF-GE3

Land van herkomst:: CN

Vishay Series EF Power MOSFET, 650V Drain Source Voltage, 34A Continuous Drain Current - SIHG085N60EF-GE3

This power MOSFET is a high-voltage N-channel device designed for switching and control tasks in industrial and electronic systems. It operates in enhancement mode and is supplied in a through-hole TO-247 package suited to assemblies requiring robust mounting and thermal handling. The device targets applications where elevated blocking voltage and substantial continuous current capability are required.

Features and Benefits:

• 650V maximum drain-source voltage enables high-voltage switching
• 34A continuous drain current supports heavy load handling
• Low Rds(on) 0.084Ω reduces conduction losses
• 184W power dissipation allows higher power operation
• 63nC typical gate charge aids fast switching in SMPS
• Maximum operating temperature 150°C sustains hot environments

Applications

• Suitable for high-voltage switch-mode power supplies
• Ideal for industrial motor drive front ends
• Used for power conversion in renewable energy inverters
• Can be used for high-voltage Pulse and inverter circuits

What gate-drive considerations are required for this device?

Gate drive must accommodate a maximum gate-source rating of 30V and manage a typical gate charge of 63nC to achieve the desired switching speed while limiting transient overshoot.

How should thermal management be approached in demanding installations?

With a 184W power dissipation rating, use an appropriately sized heatsink and thermal mounting in the TO-247 through-hole format to keep junction temperatures within the device’s limits.

Are there environmental operating limits for rugged deployments?

The device is specified to operate down to -55°C and up to 150°C, enabling use across a wide temperature range common in industrial settings.

What electrical stress limits must designers observe?

Designers should respect the 650V drain-source maximum and ensure transient protection for voltage spikes that could exceed this rating.