Vishay SIHG Type N-Channel MOSFET, 22 A, 650 V Enhancement, 3-Pin TO-247AC SIHG150N60E-GE3

RS-stocknr.:: 268-8298
Fabrikantnummer:: SIHG150N60E-GE3
Fabrikant:: Vishay

Vishay SIHG Type N-Channel MOSFET, 22 A, 650 V Enhancement, 3-Pin TO-247AC SIHG150N60E-GE3

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Subtotaal (1 tube van 25 eenheden)*

€ 65,15

(excl. BTW)

€ 78,825

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

Laatste voorraad RS

Laatste 500 stuk(s), klaar voor verzending vanaf een andere locatie

Aantal stuks	Per stuk	Per tube*
25 - 75	€ 2,606	€ 65,15
100 - 475	€ 2,134	€ 53,35
500 - 975	€ 1,819	€ 45,48
1000 +	€ 1,767	€ 44,18

*prijsindicatie

RS-stocknr.:: 268-8298
Fabrikantnummer:: SIHG150N60E-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	22A
	Maximum Drain Source Voltage Vds	650V
	Series	SIHG
	Package Type	TO-247AC
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.158Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	36nC
	Forward Voltage Vf	1.2V
	Maximum Power Dissipation Pd	179W
	Maximum Operating Temperature	150°C
	Length	15.7mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 22A
	Maximum Drain Source Voltage Vds 650V
	Series SIHG
	Package Type TO-247AC
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.158Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 36nC
	Forward Voltage Vf 1.2V
	Maximum Power Dissipation Pd 179W
	Maximum Operating Temperature 150°C
	Length 15.7mm
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - SIHG150N60E-GE3

Land van herkomst:: CN

Vishay SIHG Series MOSFET, 650V Maximum Drain Source Voltage, 22A Maximum Continuous Drain Current - SIHG150N60E-GE3

This MOSFET is a high-voltage enhancement-mode N-channel transistor designed for power-switching in demanding electronic equipment. It operates across an extended temperature range and is supplied in a through-hole package suited to robust mounting and serviceable assemblies. RoHS conformity supports its use where restricted substances requirements apply.

Features and Benefits:

• 650V drain-to-source rating enables high-voltage switching
• 22A continuous current supports substantial load handling
• 0.158 Ω Rds(on) reduces conduction losses during operation
• 36 nC typical gate charge optimises switching dynamics
• 179W maximum power dissipation allows high-power duty
• 30V gate tolerance accommodates common driver voltages

Applications

• Suitable for industrial high-voltage converters and inverters
• Ideal for motor-drive stages in control systems
• Used with forced-air cooled power supplies and regulators
• Can be used for UPS and energy-storage switching systems
• Suitable for through-hole prototyping and repairable assemblies

What package type should I allow for when designing a board?

It is supplied in a TO-247AC through-hole package that requires a compatible mounting footprint and provision for heatsinking to manage thermal loads.

How does temperature affect continuous operation limits?

The device is rated to operate from -55 °C up to 150 °C, so thermal management and derating strategies should be applied at elevated junction temperatures to maintain reliability.

What gate drive considerations are recommended for efficient switching?

With a typical gate charge of 36 nC and a maximum Vgs of 30V, choose a driver capable of delivering the required charge quickly while not exceeding the gate voltage limit.

What diode behaviour should be expected during synchronous switching?

The intrinsic forward element exhibits approximately 1.2V forward voltage, which influences conduction losses when the body diode conducts during reverse-recovery events.