Fabrikantnummer

Vishay TrenchFET Type P-Channel MOSFET, 5 A, 30 V Enhancement, 3-Pin SOT-23 SI2347DS-T1-GE3

RS-stocknr.:: 180-7778
Fabrikantnummer:: SI2347DS-T1-GE3
Fabrikant:: Vishay

Vishay TrenchFET Type P-Channel MOSFET, 5 A, 30 V Enhancement, 3-Pin SOT-23 SI2347DS-T1-GE3

Bulkkorting beschikbaar

Subtotaal (1 verpakking van 50 eenheden)*

€ 9,40

(excl. BTW)

€ 11,35

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 75,00

Op voorraad

100 stuk(s) klaar voor verzending
150 stuk(s) klaar voor verzending vanaf een andere locatie
Plus verzending 4.850 stuk(s) vanaf 02 januari 2026

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per verpakking*
50 - 450	€ 0,188	€ 9,40
500 - 1200	€ 0,132	€ 6,60
1250 - 2450	€ 0,122	€ 6,10
2500 - 4950	€ 0,113	€ 5,65
5000 +	€ 0,107	€ 5,35

*prijsindicatie

RS-stocknr.:: 180-7778
Fabrikantnummer:: SI2347DS-T1-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	5A
	Maximum Drain Source Voltage Vds	30V
	Package Type	SOT-23
	Series	TrenchFET
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	42mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	1.1W
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	-1.2V
	Typical Gate Charge Qg @ Vgs	14.5nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Height	1.12mm
	Width	2.64 mm
	Standards/Approvals	No
	Length	3.04mm
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 5A
	Maximum Drain Source Voltage Vds 30V
	Package Type SOT-23
	Series TrenchFET
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 42mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 1.1W
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf -1.2V
	Typical Gate Charge Qg @ Vgs 14.5nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Height 1.12mm
	Width 2.64 mm
	Standards/Approvals No
	Length 3.04mm
	Automotive Standard No

Datasheet

Land van herkomst:: CN

Vishay MOSFET

The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 30V and a maximum gate-source voltage of 20V. It has drain-source resistance of 42mohm at a gate-source voltage of 10V. It has a maximum power rating of 1.7W and continuous drain current of 5A. The minimum and a maximum driving voltage for this transistor are 4.5V and 10V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Applications

• DC/DC converter

• Load switch

• Notebook adaptor switch

• Power management

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• Rg tested