Fabrikantnummer

Vishay TrenchFET Type P-Channel MOSFET, 6 A, 20 V Enhancement, 3-Pin SOT-23 SI2399DS-T1-GE3

RS-stocknr.:: 180-7829
Fabrikantnummer:: SI2399DS-T1-GE3
Fabrikant:: Vishay

Vishay TrenchFET Type P-Channel MOSFET, 6 A, 20 V Enhancement, 3-Pin SOT-23 SI2399DS-T1-GE3

Bulkkorting beschikbaar

Subtotaal (1 verpakking van 20 eenheden)*

€ 7,68

(excl. BTW)

€ 9,30

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 75,00

Tijdelijk niet op voorraad

Verzending 8.200 stuk(s) vanaf 05 januari 2026

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per verpakking*
20 - 180	€ 0,384	€ 7,68
200 - 480	€ 0,376	€ 7,52
500 - 980	€ 0,284	€ 5,68
1000 - 1980	€ 0,234	€ 4,68
2000 +	€ 0,184	€ 3,68

*prijsindicatie

RS-stocknr.:: 180-7829
Fabrikantnummer:: SI2399DS-T1-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	6A
	Maximum Drain Source Voltage Vds	20V
	Package Type	SOT-23
	Series	TrenchFET
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	67mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	10nC
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	1.6W
	Forward Voltage Vf	-1.2V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	3.04mm
	Width	2.64 mm
	Height	1.12mm
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 6A
	Maximum Drain Source Voltage Vds 20V
	Package Type SOT-23
	Series TrenchFET
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 67mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 10nC
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 1.6W
	Forward Voltage Vf -1.2V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 3.04mm
	Width 2.64 mm
	Height 1.12mm
	Automotive Standard No

Datasheet

Land van herkomst:: CN

Vishay MOSFET

The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 20V and a maximum gate-source voltage of 12V. It has drain-source resistance of 34mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 2.5W and continuous drain current of 6A. The minimum and a maximum driving voltage for this transistor are 2.5V and 10V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Applications

• DC/DC converters

• Load switch

• PA switch

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• IEC 61249-2-21

• Rg tested