Vishay Single E 1 Type N-Channel Power MOSFET, 26 A, 500 V, 3-Pin TO-220AB SIHP25N50E-GE3

RS-stocknr.:: 180-7790
Fabrikantnummer:: SIHP25N50E-GE3
Fabrikant:: Vishay

Vishay Single E 1 Type N-Channel Power MOSFET, 26 A, 500 V, 3-Pin TO-220AB SIHP25N50E-GE3

Bulkkorting beschikbaar

Bekijk bulkkorting

Subtotaal (1 verpakking van 5 eenheden)*

€ 15,07

(excl. BTW)

€ 18,235

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

Op voorraad

280 stuk(s) klaar voor verzending vanaf een andere locatie

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per verpakking*
5 - 45	€ 3,014	€ 15,07
50 - 120	€ 2,772	€ 13,86
125 - 245	€ 2,558	€ 12,79
250 - 495	€ 2,412	€ 12,06
500 +	€ 2,258	€ 11,29

*prijsindicatie

RS-stocknr.:: 180-7790
Fabrikantnummer:: SIHP25N50E-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	26A
	Maximum Drain Source Voltage Vds	500V
	Series	E
	Package Type	TO-220AB
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.145Ω
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	86nC
	Maximum Power Dissipation Pd	250W
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Transistor Configuration	Single
	Length	14.4mm
	Standards/Approvals	RoHS
	Height	6.71mm
	Number of Elements per Chip	1
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 26A
	Maximum Drain Source Voltage Vds 500V
	Series E
	Package Type TO-220AB
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.145Ω
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 86nC
	Maximum Power Dissipation Pd 250W
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Transistor Configuration Single
	Length 14.4mm
	Standards/Approvals RoHS
	Height 6.71mm
	Number of Elements per Chip 1
	Automotive Standard No

Datasheet

Land van herkomst:: CN

Vishay Series E Power MOSFET, 500V Drain‑Source Voltage, 26A Continuous Drain Current - SIHP25N50E-GE3

This power MOSFET is an N-channel single transistor in a TO-220AB package designed for high-voltage switching and power conversion tasks. It operates across a wide ambient temperature span and is intended for applications that demand significant power handling and robust gate-drive characteristics.

Features and Benefits:

• 500V drain rating enabling high-voltage switching applications
• 26A continuous drain current for sustained load handling
• 250W maximum power dissipation allowing high-power operation
• 0.145Ω Rds(on) reducing conduction losses under load
• 86nC typical gate charge supporting predictable switching behaviour
• 30V Vgs maximum permitting common gate-drive voltages

Applications

• Suitable for industrial power supplies and converters
• Ideal for switch-mode power topologies in inverters
• Used for motor-drive circuits requiring 500V capability
• Can be used for high-voltage relay and protection switching
• Used with discrete power stages in high-temperature environments

What temperature range can it operate within?

It functions across -55°C to 150°C, accommodating cold starts and elevated operating conditions.

How does the package affect thermal management?

The TO-220AB format permits bolting to a heatsink for enhanced thermal dissipation and improved steady-state thermal resistance.

What gate-drive limits should be observed?

Keep the gate-to-source voltage within ±30V to avoid exceeding the device’s gate threshold tolerances.

Is the device configured for multi-chip implementation?

The die contains a single element per chip, so paralleling requires careful current-sharing design.