Vishay Single E 1 Type N-Channel Power MOSFET, 26 A, 500 V, 3-Pin TO-220AB SIHP25N50E-GE3

RS-stocknr.:: 180-7790
Fabrikantnummer:: SIHP25N50E-GE3
Fabrikant:: Vishay

Vishay Single E 1 Type N-Channel Power MOSFET, 26 A, 500 V, 3-Pin TO-220AB SIHP25N50E-GE3

Bulkkorting beschikbaar

Subtotaal (1 verpakking van 5 eenheden)*

€ 14,88

(excl. BTW)

€ 18,005

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 75,00

Op voorraad

280 stuk(s) klaar voor verzending vanaf een andere locatie

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per verpakking*
5 - 45	€ 2,976	€ 14,88
50 - 120	€ 2,738	€ 13,69
125 - 245	€ 2,528	€ 12,64
250 - 495	€ 2,38	€ 11,90
500 +	€ 2,23	€ 11,15

*prijsindicatie

RS-stocknr.:: 180-7790
Fabrikantnummer:: SIHP25N50E-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	26A
	Maximum Drain Source Voltage Vds	500V
	Package Type	TO-220AB
	Series	E
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.145Ω
	Typical Gate Charge Qg @ Vgs	86nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	250W
	Maximum Gate Source Voltage Vgs	±30 V
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Transistor Configuration	Single
	Height	6.71mm
	Width	10.52 mm
	Standards/Approvals	RoHS
	Length	14.4mm
	Number of Elements per Chip	1
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 26A
	Maximum Drain Source Voltage Vds 500V
	Package Type TO-220AB
	Series E
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.145Ω
	Typical Gate Charge Qg @ Vgs 86nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 250W
	Maximum Gate Source Voltage Vgs ±30 V
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Transistor Configuration Single
	Height 6.71mm
	Width 10.52 mm
	Standards/Approvals RoHS
	Length 14.4mm
	Number of Elements per Chip 1
	Automotive Standard No

Datasheet

Land van herkomst:: CN

Vishay MOSFET

The Vishay through-hole mount N-channel TO-220AB-3 MOSFET is a new age product with a drain-source voltage of 500V and a maximum gate-source voltage of 30V. It has a drain-source resistance of 145mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 250W and continuous drain current of 26A. It has a driving voltage of 10V. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Low figure-of-merit (FOM): Ron x Qg

• Low gate charge (Qg)

• Low input capacitance (Ciss)

• Operating temperature ranges between -55°C and 150°C

• Reduced switching and conduction losses

Applications

• Hard switched topologies

• PC silver box/ATX power supplies

• Power factor correction power supplies (PFC)

• Switch mode power supplies (SMPS)

• Two-stage LED lighting

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• UIS tested